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Journal of Computational Electronics

Issue 1/2020

Content (45 Articles)

Calculations of the structural and optoelectronic properties of cubic CdxZn1−xSeyTe1−y semiconductor quaternary alloys using the DFT-based FP-LAPW approach

Sayantika Chanda, Debankita Ghosh, Bimal Debnath, Manish Debbarma, Rahul Bhattacharjee, Surya Chattopadhyaya

Tight-binding description of graphene–BCN–graphene layered semiconductors

Mahsa Ebrahimi, Ashkan Horri, Majid Sanaeepur, Mohammad Bagher Tavakoli

Sensitivity analysis for an electron transport system: application to the case of wurtzite gallium nitride

Yanyan He, John Chilleri, Stephen K. O’Leary, Michael S. Shur, Robert M. Kirby

Simudo: a device model for intermediate band materials

Eduard C. Dumitrescu, Matthew M. Wilkins, Jacob J. Krich

Band transport and localised states in modelling the electric switching of chalcogenide materials

Rossella Brunetti, Carlo Jacoboni, Enrico Piccinini, Massimo Rudan

Near-room-temperature spin caloritronics in a magnetized and defective zigzag MoS2 nanoribbon

Farahnaz Zakerian, Morteza Fathipour, Rahim Faez, Ghafar Darvish

Bayesian inversion for nanowire field-effect sensors

Amirreza Khodadadian, Benjamin Stadlbauer, Clemens Heitzinger

A double-gate heteromaterial tunnel FET optimized using an evolutionary algorithm

Sagarika Choudhury, Brinda Bhowmick, Krishna Lal Baishnab

Performance enhancement of CIGS-based solar cells by incorporating an ultrathin BaSi2 BSF layer

Sayed Rezwanul Islam Biplab, Md. Hasan Ali, Md. Mahabub Alam Moon, Md. Firoz Pervez, Md. Ferdous Rahman, Jaker Hossain

Modeling and simulation of temporal and temperature drift for the development of an accurate ISFET SPICE macromodel

Soumendu Sinha, Nishad Sahu, Rishabh Bhardwaj, Hitesh Ahuja, Rishi Sharma, Ravindra Mukhiya, Chandra Shekhar

Design and evaluation of clocked nanomagnetic logic conservative Fredkin gate

Ali Akbar Dadjouyan, Samira Sayedsalehi, Reza Faghih Mirzaee, Somayyeh Jafarali Jassbi