Journal of Computational Electronics

Special issue on ab initio simulations of electron and phonon transport in nanostructures

Mathieu Luisier, Samuel Poncé

Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green’s function: heterostructure mode space method and core charge approximation

Seonghyeok Jeon, Mincheol Shin

• Open Access

RSDFT-NEGF transport simulations in realistic nanoscale transistors

Gennady Mil’nikov, Jun-ichi Iwata, Nobuya Mori, Atsushi Oshiyama

• Open Access

Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices

Rutger Duflou, Michel Houssa, Aryan Afzalian

Recursive Green’s functions optimized for atomistic modelling of large superlattice-based devices

V. Hung Nguyen, J. -C. Charlier

• Open Access

DFTBephy: A DFTB-based approach for electron–phonon coupling calculations

Alexander Croy, Elif Unsal, Robert Biele, Alessandro Pecchia

Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation

Sanjay Gopalan, Shoaib Mansoori, Maarten Van de Put, Gautam Gaddemane, Massimo Fischetti

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Adel M’foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala

• Open Access

Electronic transport computation in thermoelectric materials: from ab initio scattering rates to nanostructures

Neophytos Neophytou, Pankaj Priyadarshi, Zhen Li, Patrizio Graziosi

Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics

Anderson S. Chaves, Michele Pizzochero, Daniel T. Larson, Alex Antonelli, Efthimios Kaxiras

Electrothermal properties of 2D materials in device applications

Samantha Klein, Zlatan Aksamija

Terahertz conductivity of monolayer MoS

S. Mitra, L. Avazpour, I. Knezevic

• Open Access

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

Damiano Marian, Enrique G. Marin, Marta Perucchini, Giuseppe Iannaccone, Gianluca Fiori

Design considerations for engineering negative capacitance FET through multilayered channel and / double-gate stacks: an ab initio and NEGF study

Mayuri Sritharan, Hyunjae Lee, Robert K. A. Bennett, Youngki Yoon

Electronic, transport and ballistic device properties of quasi-one-dimensional GeS

Mislav Matić, Mirko Poljak

• Open Access

Resistance saturation in semi-conducting polyacetylene molecular wires

Angelo Valli, Jan M. Tomczak

A deterministic Wigner transport equation solver with infinite correlation length

Kyoung Yeon Kim

• Open Access

Integral equation method for the 1D steady-state Poisson-Nernst-Planck equations

Zhen Chao, Weihua Geng, Robert Krasny

Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage

Shakaib Hussain, Abdul Jalil, Arooba Kanwal, Syed Zafar Ilyas, Sarfraz Ahmed, Ather Hassan

Large-signal behavior modeling of GaN HEMTs using SSA augmented ELM algorithm

Shaowei Wang, Jincan Zhang, Shi Yang, Hao Jin, Binrui Xu, Jinchan Wang, Liwen Zhang

Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET

N. R. Saritha, J. Charles Pravin, V. Sandeep, Josephine Selle J, V. N. Ramakrishnan

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

M. Muthu Manjula, R. Ramesh

Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application

Sirisha Meriga, Brinda Bhowmick

Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation

Sagar Khot, Dongmyung Jung, Yongwoo Kwon

Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

Aohang Zhang, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu, Yuying Wang, Jian Li

Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique

Subir Kumar Maity, Soumya Pandit

Electronic structure and optical and thermoelectric response of lead-free double perovskite BaMgLaBiO6: a first-principles study

Junaid Munir, Muhammad Jamil, Ahmed S. Jbara, Hamid Ullah, Hudabia Murtaza, H. Elhosiny Ali, Quratul Ain

On a method of treating polar-optical phonons in real space

D. K. Ferry

Research on high sensitivity fano resonance sensing based on MIM waveguide coupled with double Fibonacci spirals

Desheng Qu, Qiaohua Wu, Yiping Sun, Chunlei Li

Supercontinuum spectra above 2700 nm in circular lattice photonic crystal fiber infiltrated chloroform with the low peak power

Thuy Nguyen Thi, Lanh Chu Van

Optical designing and simulation of a concentrating solar spectrum splitting prototype

Elhem Rdhaounia, Mahmoud Ben Amara, Moncef Balghouthi

Numerical simulation of a mixed-halide perovskite solar cell using doping gradient

Ritu, Gagandeep, Ramesh Kumar, Fakir Chand

Microwave properties of a double wire array

Oleg Rybin

Transformed mathematical model of square microstrip antennas for non-sinusoidal harmonic response

Deepankar Shri Gyan, K. P. Ray

• Open Access

3D modeling of feature-scale fluorocarbon plasma etching in silica

Frâncio Rodrigues, Luiz Felipe Aguinsky, Christoph Lenz, Andreas Hössinger, Josef Weinbub

• Open Access

Simulation and dynamical analysis of a chaotic chameleon system designed for an electronic circuit

Kashif Ali Abro, Abdon Atangana

Comparative study of multi-physics generated small dipoles in conducting media

Sai Zhou, George Pan

Deep-learning-based neural network for design of a dual-band coupled-line trans-directional coupler

Tarek Sallam, Eman M. Eldesouki, Ahmed M. Attiya