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Journal of Electronic Materials

Issue 1/2001

Content (10 Articles)

Regular Issue Paper

Deposition of polycrystalline AIN thin films by coherent magnetron sputtering at temperatures <80°C

A. K. Chu, C. H. Chao, F. Z. Lee, H. L. Huang

Regular Issue Paper

Up-conversion luminescence of erbium (III) oxalate nanoparticles/titania/ÿ-glycidoxypropyltrimethoxysilane composite sol-gel thin films

Wenxiu Que, Y. Zhou, Y.L. Lam, Y. C. Chan, C. H. Kam, L. H. Gan, G. Roshan Deen

Regular Issue Paper

Simulation of microstructural evolution induced by scanned laser annealing of metallic interconnects

C. S. Hau-Riege, S. P. Hau-Riege, C. V. Thompson

Regular Issue Paper

Solid phase reaction of Ti with Si−Ge layers prepared by Ge-implantation

B. Umapathi, S. Das, S. K. Lahiri, S. Kal

Regular Issue Paper

Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

Y. Kokubun, J. Nishio, M. Abe, T. Ehara, S. Nakagomi

Regular Issue Paper

The effect of Pb contamination on the solidification behavior of Sn-Bi solders

Kil-Won Moon, William J. Boettinger, Ursula R. Kattner, Carol A. Handwerker, Doh-Jae Lee

Regular Issue Paper

Effects of impurities on removal of polysilicon in chemical-mechanical polish

Don-Gey Liu, Ming Shih Tsai, Wen Luh Yang, Chih-Yuan Cheng

Regular Issue Paper

High conductivity copper-boron alloys obtained by low temperature annealing

S.-L. Zhang, J. M. E. Harper, F. M. D'Heurle