Issue 10/2012
2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials
Content (50 Articles)
ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs)
Supriya Karmakar, Ernesto Suarez, Mukesh Gogna, Faquir Jain
Electrooptical Characterization of MWIR InAsSb Detectors
A.I. D’Souza, E. Robinson, A.C. Ionescu, D. Okerlund, T.J. de Lyon, H. Sharifi, M. Roebuck, D. Yap, R.D. Rajavel, N. Dhar, P.S. Wijewarnasuriya, C. Grein
I–V and Differential Conduction Characteristics of an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector
D.H. Guidry, C.P. Morath, V.M. Cowan, D.A. Cardimona
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir
O. Gravrand, L. Mollard, O. Boulade, V. Moreau, E. Sanson, G. Destefanis
X-ray Diffraction Investigation of Thermoelastic Properties of HgCdTe/CdZnTe Structures
P. Gergaud, A. Jonchère, B. Amstatt, X. Baudry, D. Brellier, P. Ballet
MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry
F. Aqariden, J. Elsworth, J. Zhao, C.H. Grein, S. Sivananthan
Development of MBE II–VI Epilayers on GaAs(211)B
R.N. Jacobs, C. Nozaki, L.A. Almeida, M. Jaime-Vasquez, C. Lennon, J.K. Markunas, D. Benson, P. Smith, W.F. Zhao, D.J. Smith, C. Billman, J. Arias, J. Pellegrino
Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
C. Cervera, I. Ribet-Mohamed, R. Taalat, J.P. Perez, P. Christol, J.B. Rodriguez
Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates
M. Carmody, A. Yulius, D. Edwall, D. Lee, E. Piquette, R. Jacobs, D. Benson, A. Stoltz, J. Markunas, A. Almeida, J. Arias
Colloidal HgTe Material for Low-Cost Detection into the MWIR
Emmanuel Lhuillier, Sean Keuleyan, Heng Liu, Philippe Guyot-Sionnest
Modulation Transfer Function Measurement of Infrared Focal-Plane Arrays with Small Fill Factors
Florence de la Barrière, Guillaume Druart, Nicolas Guérineau, Sylvain Rommeluère, Laurent Mugnier, Olivier Gravrand, Nicolas Baier, Nicolas Lhermet, Gérard Destefanis, Sophie Derelle
Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb
J. Chai, K.-K. Lee, K. Doyle, J.H. Dinan, T.H. Myers
Ab Initio Studies of the Unreconstructed Polar CdTe (111) Surface
Jin Li, Jacob Gayles, Nicholas Kioussis, Z. Zhang, C. Grein, F. Aqariden
Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate
K. Yasuda, M. Niraula, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, S. Muramatsu, T. Kondo, Y. Agata
Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell
James Sharp, David Pulfrey, Gilberto A. Umana-Membreno, Lorenzo Faraone, John M. Dell
Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes
K. Jóźwikowski, M. Kopytko, A. Rogalski
Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers
F. Jain, S. Karmakar, P.-Y. Chan, E. Suarez, M. Gogna, J. Chandy, E. Heller
Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates
P.G. Maloney, R. DeWames, J.G. Pellegrino, C. Billman, J.M. Arias, D.D. Edwall, D. Lee, J. Khurgin
Laser-Assisted Chemical Polishing of Silicon (112) Wafers
Niru Dandekar, Robert Chivas, Scott Silverman, Xiaolu Kou, Mark Goorsky
A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy
Kwang-Chon Kim, Seung Hyub Baek, Hyun Jae Kim, Jin Dong Song, Jin-Sang Kim
X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth
Kyoung-Keun Lee, Kevin Doyle, Jessica Chai, John H. Dinan, Thomas H. Myers
Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior
P.-Y. Chan, E. Suarez, M. Gogna, B.I. Miller, E.K. Heller, J.E. Ayers, F.C. Jain
High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials
J. Antoszewski, G.A. Umana-Membreno, L. Faraone
Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy
Shashidhar Shintri, Sunil Rao, Priyalal Wijewarnasuriya, Sudhir Trivedi, Ishwara Bhat
MBE Growth of MCT on GaAs Substrates at AIM
J. Wenisch, D. Eich, H. Lutz, T. Schallenberg, R. Wollrab, J. Ziegler
High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass
E. Colegrove, R. Banai, C. Blissett, C. Buurma, J. Ellsworth, M. Morley, S. Barnes, C. Gilmore, J. D. Bergeson, R. Dhere, M. Scott, T. Gessert, Siva Sivananthan
Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals
P. Moravec, Z. F. Tomashik, V. G. Ivanits’ka, V. M. Tomashik, J. Franc, K. Mašek, P. Höschl
Dynamical X-ray Diffraction from ZnS y Se1−y /GaAs (001) Multilayers and Superlattices with Dislocations
P.B. Rago, E.N. Suarez, F.C. Jain, J.E. Ayers
Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) Substrates
W. F. Zhao, G. Brill, Y. Chen, David J. Smith
Determination of the Temperature Dependence of the Band Gap Energy of Semiconductors from Transmission Spectra
Jean Wei, Joel M. Murray, Jacob Barnes, Leonel P. Gonzalez, Shekhar Guha
Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe
F. Gemain, I.C. Robin, S. Brochen, M. De Vita, O. Gravrand, A. Lusson
Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical Powers
Aaron L. Washington II, Lucile C. Teague, Martine C. Duff, Arnold Burger, Michael Groza, Vladimir Buliga
FeZnO-Based Resistive Switching Devices
Yang Zhang, Ziqing Duan, Rui Li, Chieh-Jen Ku, Pavel Reyes, Almamun Ashrafi, Yicheng Lu
Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector
Anne M. Itsuno, Jamie D. Phillips, Silviu Velicu
Influence of Surface Polishing on the Structural and Electronic Properties of CdZnTe Surfaces
F. Aqariden, S. Tari, K. Nissanka, Jin Li, N. Kioussis, R. E. Pimpinella, M. Dobrowolska
Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask
S. Fahey, R. Bommena, R. Kodama, R. Sporken, S. Sivananthan
Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
A. Hossain, A.E. Bolotnikov, G.S. Camarda, R. Gul, K.H. Kim, K. Kisslinger, G. Yang, L.H. Zhang, R.B. James
Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors
G. Yang, A.E. Bolotnikov, P.M. Fochuk, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, J. Horace, B. McCall, R. Gul, O.V. Kopach, S.U. Egarievwe, R.B. James
MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate
Yuanping Chen, Sina Simingalam, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Jae Jin Kim, David J. Smith
Crosstalk Modeling of Small-Pitch Two-Color HgCdTe Photodetectors
J.G.A. Wehner, E.P.G. Smith, W. Radford, C.L. Mears
Short-Wave Infrared HgCdTe Avalanche Photodiodes
Johan Rothman, Laurent Mollard, Sylvie Bosson, Gautier Vojetta, Kevin Foubert, Sylvain Gatti, Gwladys Bonnouvrier, Frederic Salveti, Alexandre Kerlain, Olivier Pacaud
HgCdTe Molecular Beam Epitaxy Growth Temperature Calibration Using Spectroscopic Ellipsometry
M.F. Vilela, G.K. Pribil, K.R. Olsson, D.D. Lofgreen
Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes
A. Kerlain, G. Bonnouvrier, L. Rubaldo, G. Decaens, Y. Reibel, P. Abraham, J. Rothman, L. Mollard, E. De Borniol
Reduction of Dislocation Density by Producing Novel Structures
A. J. Stoltz, J. D. Benson, R. Jacobs, P. Smith, L. A. Almeida, M. Carmody, S. Farrell, P. S. Wijewarnasuriya, G. Brill, Y. Chen
Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam Milling
M. Reddy, J. Wilde, J. M. Peterson, D.D. Lofgreen, S.M. Johnson
Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry
C.M. Lennon, L.A. Almeida, R.N. Jacobs, J.K. Markunas, P.J. Smith, J. Arias, A.E. Brown, J. Pellegrino
Growth and Analysis of HgCdTe on Alternate Substrates
J.D. Benson, L.O. Bubulac, P.J. Smith, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A. Almeida, A. Stoltz, J.M. Arias, G. Brill, Y. Chen, P.S. Wijewarnasuriya, S. Farrell, U. Lee
Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing
M. Jaime-Vasquez, R.N. Jacobs, C. Nozaki, J.D. Benson, L.A. Almeida, J. Arias, J. Pellegrino
Numerical Simulation of InAs nBn Back-Illuminated Detectors
Jonathan Schuster, Craig A. Keasler, Marion Reine, Enrico Bellotti