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Journal of Electronic Materials

Issue 10/2013

Content (17 Articles)

Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes

Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June-O Song, Tae-Yeon Seong

Tunnel Junction with Autodoped AlGaAs on InP

Yoshitaka Ohiso, Manabu Mitsuhara, Ryuzo Iga

Simultaneous Formation of Ohmic Contacts on p +- and n +-4H-SiC Using a Ti/Ni Bilayer

Sung-Jae Joo, Sangwon Baek, Sang-Cheol Kim, Jeong-Soo Lee

Yellow–Orange Electroluminescence of Novel Tin Complexes

Mohammad Janghouri, Ezeddin Mohajerani, Mostafa M. Amini, Ezzatollah Najafi, Hadi Hosseini

Structure and Manufacturing Process of MnO2 Counter Electrode in Niobium Suboxide Capacitors

Liqin Chen, Bo Li, Zhaoxiong Qi, Hai Guo, Ji Zhou, Longtu Li

In y Co4Sb12 Skutterudite: Phase Equilibria and Crystal Structure

A. Grytsiv, P. Rogl, H. Michor, E. Bauer, G. Giester