Issue 12/2000
Content (10 Articles)
Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
F. K. Koschnick, K. Michael, J. -M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Munoz
Fracture of Sn-3.5%Ag solder alloy under creep
V. I. Igoshev, J. I. Kleiman, D. Shangguan, S. Wong, U. Michon
Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells
J.R Botha, A. W. R. Leitch
Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures
Y. Q. Wang, Z. L. Wang, T. Brown, A. Brown, G. May
Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength
Ling Liao, Desmond R. Lim, Anuradha M. Agarwal, Xiaoman Duan, Kevin K. Lee, Lionel C. Kimerling
Molecular beam epitaxial growth of BGaAs ternary compounds
V. K. Gupta, M. W. Koch, N. J. Watkins, Y. Gao, G. W. Wicks
Numerical prediction of mechanical properties of Pb-Sn solder alloys containing antimony, bismuth and or silver ternary trace elements
Shiva P. Gadag, Susant Patra
Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient
D. Keiper, R. Westphalen, G. Landgren
Control of the critical supercooling in LPE
A. Yu. Gorbatchev, V. A. Mishurnyi, F. de Anda
Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors
R. Driad, W. R. McKinnon, Z. H. Lu, S. P. McAlister