Issue 12/2001
Content (24 Articles)
Dishing and nitride erosion of STI-CMP for different integration schemes
Lim Lim Hwee, S. Balakumar, S. Mahadevan, Zhou Mei Sheng, Alex See, M. Rahman, A. Senthilkumar
Nickel silicide as a contact material for submicron CMOS devices
D. Z. Chi, D. Mangelinck, A. S. Zuruzi, A. S. W. Wong, S. K. Lahiri
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
Huicai Zhong, Greg Heuss, You-Seok Suh, Veena Misra, Shin-Nam Hong
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
Veena Misra, Manoj Kulkarni, Huicai Zhong
Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films
S. H. Kang, Y. S. Obeng, M. A. Decker, M. Oh, S. M. Merchant, S. K. Karthikeyan, C. S. Seet, A. S. Oates
Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects
L. W. Chu, W. K. Chim, K. L. Pey, J. Y. K. Yeo, L. Chan
Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process
A. K. Sikder, Frank Giglio, John Wood, Ashok Kumar, Mark Anthony
Nano-indentation studies of xerogel and SiLK low-K dielectric materials
A. K. Sikder, I. M. Irfan, Ashok Kumar, J. M. Anthony
Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition
S. Berger, A. Captain, H. Spiellberg, E. Iskevitch, S. Levi
Plastic deformation and interfacial sliding in Al and Cu thin film: Si substrate systems due to thermal cycling
I. Dutta, M. W. Chen, K. Peterson, T. Shultz
Laser-induced titanium disilicide formation for submicron technologies
Y. F. Chong, K. L. Pey, A. T. S. Wee, A. See, Z. X. Shen, C. H. Tung, R. Gopalakrishnan, Y. F. Lu
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, J. Y. Dai, A. See
Pattern density and deposition profile effects on oxide chemical-mechanical polishing and chip-level modeling
Y. B. Park, I. Y. Yoon, H. H. Ryu, W. G. Lee
Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization
Y. B. Park, D. W. Lee, H. H. Ryu, W. Lee
A review: Thermal processing in fast ramp furnaces
Pradip K. Roy, Sailesh M. Merchant, Sanjeev Kaushal
Effect of via etching process and postclean treatment on via electrical performance
Chiew Nyuk Ho, Yeow Kheng Lim, Higelin Gerald, Wang Ling Goh, Man Siu Tse, Alex See
“Seedless” electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices
Michael J. Shaw, Stephan Grunow, David J. Duquette
Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices
Jun-Ho Choy, Young-Soo Kim, Tae-Keun Hwang, Yeong-Cheol Kim, Duk-Hee Lee, Jin-Tae Choi, Kwon-Shik Park, Sang Beom Han
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
Bhushan Sopori, Yi Zhang, N. M. Ravindra
Relaxed silicon-germanium on insulator substrate by layer transfer
Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald