Issue 2/2000
Content (13 Articles)
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
Dapeng Xu, Hui Yang, J. B. Li, S. F. Li, Y. T. Wang, D. G. Zhao, R. H. Wu
Effects of surface porosity on tungsten trioxide(WO3) films’ electrochromic performance
W. J. Lee, Y. K. Fang, Jyh-Jier Ho, W. T. Hsieh, S. F. Ting, Daoyang Huang, Fang C. Ho
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
I. -H. Tan, D. A. Vanderwater, J. -W. Huang, G. E. Hofler, F. A. Kish, E. I. Chen, T. D. Ostentowski
Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning
Se-Ki Park, Cheon Lee, Eun Kyu Kim
The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics
Fan Zhang, Ahmed A. Busnaina, Michael A. Fury, Shi-Qing Wang
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maassdorf, J. W. Tomm, P. Kurpas, M. Achouche, J. Würfl, M. Weyers
Phosphorus implantation into 4H-silicon carbide
M. A. Capano, R. Santhakumar, R. Venugopal, M. R. Melloch, J. A. Cooper Jr.
Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy
Tong-Ho Kim, April S. Brown, Robert A. Metzger
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
R. F. Kopf, R. A. Hamm, Y. -C. Wang, R. W. Ryan, A. Tate, M. A. Melendes, R. Pullela, Y. -K. Chen, J. Thevin
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
Charles R. Lutz, Jason Kanaley, Kei May Lau
High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x>0.65)
B. Bieg, J. G. Cederberg, T. F. Kuech
The adhesion strength of A lead-free solder hot-dipped on copper substrate
Shan-Pu Yu, Min-Hsiung Hon, Moo-Chin Wang