Issue 3/2001
Content (30 Articles)
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
J. W. P. Hsu, M. J. Manfra, D. V. Lang, K. W. Baldwin, L. N. Pfeiffer, R. J. Molnar
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
J. W. P. Hsu, D. V. Lang, S. Richter, R. N. Kleiman, A. M. Sergent, D. C. Look, R. J. Molnar
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
S. T. Bradley, A. P. Young, L. J. Brillson, M. J. Murphy, W. J. Schaff
Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN
Jong Kyu Kim, Ki-Jeong Kim, Bongsoo Kim, Jae Nam Kim, Joon Seop Kwak, Yong Jo Park, Jong-Lam Lee
The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction
H. M. Ng, R. Harel, S. N. G. Chu, A. Y. Cho
The temperature dependence of the thermal conductivity of single crystal GaN films
C. Luo, D. R. Clarke, J. R. Dryden
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. -I. Chyi, T. -E. Nee, C. -C. Chou, C. -M. Lee
Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy
Sangbeom Kang, W. Alan Doolittle, K. K. Lee, Z. R. Dai, Z. L. Wang, Stuart R. Stock, April S. Brown
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
C. D. Lee, V. Ramachandran, A. Sagar, R. M. Feenstra, D. W. Greve, W. L. Sarney, L. Salamanca-Riba, D. C. Look, Song Bai, W. J. Choyke, R. P. Devaty
Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN
Jong Kyu Kim, Chong Cook Kim, Tae Sik Cho, Jung Ho Je, Joon Seop Kwak, Yong Jo Park, Jong-Lam Lee
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
K. O. Schweitz, S. E. Mohney
The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
Dae-Woo Kim, Jun Cheol Bae, Woo Jin Kim, Hong Koo Baik, Jae-Min Myoung, Sung-Man Lee
Light emission from interface traps and bulk defects in SiC MOSFETs
R. E. Stahlbush, P. J. Macfarlane
Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
Q. Zhang, V. Madangarli, M. Tarplee, T. S. Sudarshan
Comparison of F2 plasma chemistries for deep etching of SiC
P. Leerungnawarat, K. P. Lee, S. J. Pearton, F. Ren, S. N. G. Chu
Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD
G. Wagner, B. Thomas, J. Doerschel, J. Dolle, K. Irmscher
Etching of silicon carbide for device fabrication and through via-hole formation
F. A. Khan, B. Roof, L. Zhou, I. Adesida
Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation
Y. Koshka, M. Mazzola, S. Yingquan, C. U. Pittman
Boron diffusion into 6H-SiC through graphite mask
S. Soloviev, Y. Gao, X. Wang, T. Sudarshan
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
S. E. Saddow, T. E. Schattner, J. Brown, L. Grazulis, K. Mahalingam, G. Landis, R. Bertke, W. C. Mitchel
Influence of carrier freeze-out on SiC Schottky junction admittance
Andrei V. Los, Michael S. Mazzola
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
S. -K. Lee, C. -M. Zetterling, M. Östling
Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization
E. Danielsson, S. -K. Lee, C. -M. Zetterling, M. Östling
Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs
S. Banerjee, K. Chatty, T. P. Chow, R. J. Gutmann
A microindentation technique for determining strength of solder interface with silver metallization on Co-fired multilayer ceramic substrate
Jian Ku Shang, Rong-Fong Huang, David L. Wilcox
Thermally stable Nb and Nb/Au ohmic contacts to p-GaN
Han-Ki Kim, Tae-Yeon Seong, Cheul-Ro Lee
An optimum approach for fabrication of tapered hemispherical-end fiber for laser module packaging
H. M. Yang, D. C. Jou, M. H. Chen, S. H. Wu, W. H. Cheng
Chemical and morphological studies of plasma-treated integrated circuit bond pads
Y. F. Chong, R. Gopalakrishnan, C. F. Tsang, G. Sarkar, S. Lim, S. Tatti
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
A. N. Bright, D. M. Tricker, C. J. Humphreys, R. Davies