Issue 3/2004
Content (13 Articles)
Effects of different printed-circuit-board surface finishes on the formation and growth of intermetallics at thermomechanically fatigued, small outline J leads/Sn-Ag-Cu interfaces
Pei-Lin Wu, Meng-Kuang Huang, Chiapyng Lee, Shyh-Rong Tzan
A novel structure of woven continuous-carbon fiber composites with high electromagnetic shielding
Wern Shiarng Jou
Intermetallic compounds formed during the reflow and aging of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder ball grid array packages
M. D. Cheng, S. Y. Chang, S. F. Yen, T. H. Chuang
The contact characteristics of SiCN films for opto-electrical devices applications
Wen-Rong Chang, Yean-Kuen Fang, Shyh-Fann Ting, Shih-Fang Chen, Chun-Yu Lin, Sheng-Beng Hwang, Cheng-Nan Chang
Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP
S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, L. M. Gedvilas, B. M. Keyes, R. K. Ahrenkiel, H. R. Moutinho
Comparative study of electrically conductive thick films with and without glass
Zongrong Liu, D. D. L. Chung
Pressure electrical contact improved by carbon black paste
Chia-Ken Leong, D. D. L. Chung
Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures
Zhenghua An, Miao Zhang, Ricky K. Y. Fu, Paul K. Chu, Chenglu Lin
Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices
C. A. Wang, D. A. Shiau, P. G. Murphy, P. W. O’Brien, R. K. Huang, M. K. Connors, A. C. Anderson, D. Donetsky, S. Anikeev, G. Belenky, D. M. Depoy, G. Nichols
Study on Cu particles-enhanced SnPb composite solder
Yanfu Yan, Jianping Liu, Yaowu Shi, Zhidong Xia
Effect of spin coating on the curing rate of epoxy adhesive for the fabrication of a polymer optical waveguide
M. A. Uddin, H. P. Chan, C. K. Chow, Y. C. Chan
Reactive interdiffusion between a lead-free solder and Ti/Ni/Ag thin-film metallizations
G. Ghosh
Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, R. M. Frazier, B. P. Gila, C. R. Abernathy, S. J. Pearton, I. A. Buyanova, G. Y. Rudko, W. M. Chen, C. -C. Pan, G. -T. Chen, J. -I. Chyi, J. M. Zavada