Issue 4/2007
Content (44 Articles)
Identification of a Three-Site Defect in Semi-Insulating 4H-SiC
N. Y. Garces, W. E. Carlos, E. R. Glaser, M. A. Fanton
The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes
Kung-Yen Lee, Michael A. Capano
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC
M. Gao, S. Tsukimoto, S.H. Goss, S.P. Tumakha, T. Onishi, M. Murakami, L.J. Brillson
Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on []- and [0001]-Oriented Silicon Carbide Substrates
S.M. Bishop, C.L. Reynolds Jr., Z. Liliental-Weber, Y. Uprety, J. Zhu, D. Wang, M. Park, J.C. Molstad, D.E. Barnhardt, A. Shrivastava, T.S. Sudarshan, R.F. Davis
Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy
Kendrick X. Liu, Robert E. Stahlbush, Mark E. Twigg, Joshua D. Caldwell, Evan R. Glaser, Karl D. Hobart, Francis J. Kub
Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC
Z.-Q. Fang, B. Claflin, D.C. Look, G.C. Farlow
Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide
F. A. Mohammad, Y. Cao, L. M. Porter
Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes
Joshua D. Caldwell, Kendrick X. Liu, Marko J. Tadjer, Orest J. Glembocki, Robert E. Stahlbush, Karl D. Hobart, Fritz Kub
Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC
SIDDARTH G. SUNDARESAN, MULPURI V. RAO, YONGLAI TIAN, JOHN A. SCHREIFELS, MARK C. WOOD, KENNETH A. JONES, ALBERT V. DAVYDOV
Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization
Govindhan Dhanaraj, Yi Chen, Hui Chen, Dang Cai, Hui Zhang, Michael Dudley
Effects of Illumination on Ar+-Implanted n-Type 6H-SiC Epitaxial Layers
A.O. Evwaraye, S.R. Smith, W.C. Mitchel, M.A. Capano
Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition
X. Weng, J. D. Acord, A. Jain, E. C. Dickey, J. M. Redwing
Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers
Dongwon Yoo, Jae Boum Limb, Jae-Hyun Ryou, Wonseok Lee, Russell D. Dupuis
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System
J.-J. Chen, M. Hlad, A.P. Gerger, B.P. Gila, F. Ren, C.R. Abernathy, S.J. Pearton
Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure
E. Dimakis, E. Iliopoulos, M. Kayambaki, K. Tsagaraki, A. Kostopoulos, G. Konstantinidis, A. Georgakilas
Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors
Rohit Khanna, L. Stafford, S.J. Pearton, T.J. Anderson, F. Ren, I.I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan-Young Lee, Jihyun Kim
Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN
L.F. Voss, L. Stafford, G.T. Thaler, C.R. Abernathy, S.J. Pearton, J.-J. Chen, F. Ren
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN
J.K. Hite, R.M. Frazier, R.P. Davies, G.T. Thaler, C.R. Abernathy, S.J. Pearton, J.M. Zavada, E. Brown, U. Hömmerich
Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination
R. T. Green, W. S. Tan, P. A. Houston, T. Wang, P. J. Parbrook
Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor
Toshiyuki Takizawa, Jun Shimizu, Tetsuzo Ueda
Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties
Y.I. Alivov, Ü. Özgür, X. Gu, C. Liu, Y. Moon, H. Morkoç, O. Lopatiuk, L. Chernyak, C. W. Litton
X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution
R. Dalmau, R. Collazo, S. Mita, Z. Sitar
Compositional Study of Copper-Germanium Ohmic Contact to n-GaN
Michael L. Schuette, Wu Lu
Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes
J. B. Limb, W. Lee, J. H. Ryou, D. Yoo, R. D. Dupuis
The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature
K. Lee, T.H. Myers
Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy
Kai Qiu, X.H. Li, F. Zhong, Z.J. Yin, X.D. Luo, C.J. Ji, Q.F. Han, J.R. Chen, X.C. Cao, X.J. Xie, Y.Q. Wang
Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors
B. Claflin, D. C. Look, D. R. Norton
Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane Mg x Zn1–x O (0 ≤ x ≤ 0.3) Films
Gaurav Saraf, Jian Zhong, Olga Dulub, Ulrike Diebold, Theo Siegrist, Yicheng Lu
Tri-Buffer Process: A New Approach to Obtain High-Quality ZnO Epitaxial Films on Sapphire Substrates
Z. X. Mei, X. L. Du, Y. Wang, M. J. Ying, Z. Q. Zeng, H. T. Yuan, J. F. Jia, Q. K. Xue, Z. Zhang
Epitaxial Growth and Characterization of p-Type ZnO
M. Pan, J. Nause, V. Rengarajan, R. Rondon, E.H. Park, I.T. Ferguson
Ferromagnetism in Transition-Metal Doped ZnO
S.J. Pearton, D.P. Norton, M.P. Ivill, A.F. Hebard, J.M. Zavada, W.M. Chen, I.A. Buyanova
Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films
J. Kennedy, A. Markwitz, H. J. Trodahl, B. J. Ruck, S. M. Durbin, W. Gao
Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation
V. Avrutin, Ü. Özgür, S. Chevtchenko, C. Litton, H. Morkoç
Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO
J.S. Wright, L. Stafford, B.P. Gila, D.P. Norton, S.J. Pearton, Hung-Ta Wang, F. Ren
Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source
L. L. Yang, Z. Z. Ye, L. P. Zhu, Y. J. Zeng, Y. F. Lu, B. H. Zhao
Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient
Shoubin Xue, Huizhao Zhuang, Chengshan Xue, Lijun Hu, Baoli Li, Shiying Zhang
The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO
Leo P. Schuler, Nagarajan Valanoor, Paul Miller, Ian Guy, Roger J. Reeves, Maan M. Alkaisi
Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes
K.K. Allums, M. Hlad, A.P. Gerger, B.P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren, R. Dwivedi, T.N. Fogarty, R. Wilkins
Bias-Dependent Ultraviolet Photodetection by Au-Mg0.1Zn0.9O/ZnO-Ag Structure
S. Mridha, R. Ghosh, D. Basak
Magnetic Properties of Fe-Implanted ZnO Nanotips Grown by Metal-Organic Chemical Vapor Deposition
P. Wu, G. Saraf, Y. Lu, D.H. Hill, D.A. Arena, R.A. Bartynski, F. Cosandey, J.F. Al-Sharab, L. Wielunski, R. Gateau, J. Dvorak, A. Moodenbaugh, J.A. Raley, Yung Kee Yeo
Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
Y.A. Xi, K.X. Chen, F. Mont, J.K. Kim, E.F. Schubert, C. Wetzel, W. Liu, X. Li, J.A. Smart