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Journal of Electronic Materials

Issue 5/2012

2011 Electronic Materials Conference

Content (28 Articles)

Atom Probe Tomography of Zinc Oxide Nanowires

Nabil Dawahre, Gang Shen, Soner Balci, William Baughman, David S. Wilbert, Nick Harris, Lee Butler, Rich Martens, Seongsin Margaret Kim, Patrick Kung

Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes

C. Gutsche, A. Lysov, I. Regolin, B. Münstermann, W. Prost, F. J. Tegude

Thermoelectric Properties of Mn-Doped Ca5Al2Sb6

Alex Zevalkink, Jessica Swallow, G. Jeffrey Snyder

LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition

Nick M. Sbrockey, Michael Luong, Eric M. Gallo, Jennifer D. Sloppy, Guannan Chen, Christopher R. Winkler, Stephanie H. Johnson, Mitra L. Taheri, Gary S. Tompa, Jonathan E. Spanier

Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)

Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Sandeep Sohal, Denis Myasishchev, Georgiy M. Guryanov, Vladimir Kuryatkov, Mark Holtz, Sergey Nikishin

Synthesis of Ge1−x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)

A. Bhatia, W.M. Hlaing Oo, G. Siegel, P.R. Stone, K.M. Yu, M.A. Scarpulla

Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation

Nick Julian, Phil Mages, Chong Zhang, Jack Zhang, Stephan Kraemer, Susanne Stemmer, Steven Denbaars, Larry Coldren, Pierre Petroff, John Bowers

Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays

S. Jha, C.D. Wang, C.Y. Luan, C.P. Liu, H. Bin, O. Kutsay, I. Bello, J.A. Zapien, W.J. Zhang, S.T. Lee

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)

Shalini Lal, Eric Snow, Jing Lu, Brian Swenson, Stacia Keller, Steven P. Denbaars, Umesh K. Mishra

In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

Jarod C. Gagnon, Mihir Tungare, Xiaojun Weng, Jeffrey M. Leathersich, Fatemeh Shahedipour-Sandvik, Joan M. Redwing

Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination

C.-C. Huang, A.D. Mason, J.F. Conley Jr., C. Heist, M.T. Koesdjojo, V.T. Remcho, T. Afentakis

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

C. Edmunds, L. Tang, D. Li, M. Cervantes, G. Gardner, T. Paskova, M. J. Manfra, O. Malis

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

Seungyong Jung, Gela Kipshidze, Rui Liang, Sergey Suchalkin, Leon Shterengas, Gregory Belenky

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Benjamin Reuters, A. Wille, B. Holländer, E. Sakalauskas, N. Ketteniss, C. Mauder, R. Goldhahn, M. Heuken, H. Kalisch, A. Vescan

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Lin Cheng, Anant K. Agarwal, Sarit Dhar, Sei-Hyung Ryu, John W. Palmour

Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers

R.T. Moug, H. Sultana, Y. Yao, A. Alfaro-Martinez, L. Peng, T. Garcia, A. Shen, C. Gmachl, M.C. Tamargo

Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

Peter G. Burke, Trevor E. Buehl, Pernot Gilles, Hong Lu, Ali Shakouri, Chris J. Palmstrom, John E. Bowers, Arthur C. Gossard

Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

David W. Mueller, Denzil Roberts, Gregory Triplett

Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices

Elias Warde, Salam Sakr, Maria Tchernycheva, Francois Henry Julien

MOCVD Growth of Erbium Monoantimonide Thin Film and Nanocomposites for Thermoelectrics

Kate J. Norris, Andrew J. Lohn, Takehiro Onishi, Elane Coleman, Vernon Wong, Ali Shakouri, Gary S. Tompa, Nobuhiko P. Kobayashi