Issue 7/2001
Content (22 Articles)
InAs/InGaSb photodetectors grown on GaAs bonded substrates
M. F. Vilela, K. A. Anselm, N. Sooriar, J. L. Johnson, C. H. Lin, G. J. Brown, K. Mahalingam, A. Saxler, F. Szmulowicz
Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates
P. D. Moran, T. F. Kuech
Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE
D. Zubia, S. Zhang, R. Bommena, X. Sun, S. R. J. Brueck, S. D. Hersee
High mobility electron heterostructure wafer fused onto LiNbO3
K. J. Friedland, A. Riedel, H. Kostial, M. Höricke, R. Hey, K. H. Ploog
A study of cracking in GaN grown on silicon by molecular beam epitaxy
R. Jothilingam, M. W. Koch, J. B. Posthill, G. W. Wicks
High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
G. Kipshidze, S. Nikishin, V. Kuryatkov, K. Choi, Ìu. Gherasoiu, T. Prokofyeva, M. Holtz, H. Temkin, K. D. Hobart, F. J. Kub, M. Fatemi
Substrate smoothing using gas cluster ion beam processing
L. P. Allen, D. B. Fenner, V. Difilippo, C. Santeufemio, E. Degenkolb, W. Brooks, M. Mack, J. Hautala
The generic nature of the Smart-Cut® process for thin film transfer
B. Aspar, H. Moriceau, E. Jalaguier, C. Lagahe, A. Soubie, B. Biasse, A. M. Papon, A. Claverie, J. Grisolia, G. Benassayag, F. Letertre, O. Rayssac, T. Barge, C. Maleville, B. Ghyselen
Silicon layer transfer using wafer bonding and debonding
Cynthia Colinge, Brian Roberds, Brian Doyle
Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates
G. Wang, T. Ogawa, F. Kunimasa, M. Umeno, T. Soga, T. Jimbo, T. Egawa
Defects in annealed 1.5 MeV boron implanted p-type silicon
J. Y. Dai, K. K. Ong, D. Z. Chi, M. H. Liang, K. C. Leong, L. Chan, S. K. Lahiri
Development of Al-free ohmic contact to n-GaN
Dae-Woo Kim, Jun Cheol Bae, Woo Jin Kim, Hong Koo Baik, Cha Yeon Kim, Wook Kim, Yoon Ho Choi, Chin-Kyo Kim, Tae-Kyung Yoo, Chang Hee Hong, Sung-Man Lee
Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers
Ching-Tingh Lee, Hsiao-Wei Kao, Fu-Tasi Hwang
Spatial distribution of metal fillers in isotropically conductive adhesives
Y. Fu, M. Willander, J. Liu
Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors
Ting Li, D. J. H. Lambert, A. L. Beck, C. J. Collins, B. Yang, M. M. Wong, U. Chowdhury, R. D. Dupuis, J. C. Campbell
Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing
Bi-Lian Young, Jenq-Gong Duh
Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors
K. J. Choi, J. L. Lee
N-type doping of 4H-SiC with phosphorus Co-implanted with C or Si
L. Zhu, Z. Li, T. P. Chow
Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP
M. L. Dotor, C. Quintana, D. Golmayo
Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
Young-Woo Ok, Chel-Jong Choi, Tae-Yeon Seong, K. Uesugi, I. Suemune