Skip to main content
Top

Journal of Electronic Materials

Issue 9/2003

Content (12 Articles)

Regular Issue Paper

Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

Hojin Ryu, Jinmo Kang, Younggun Han, Donghwan Kim, James Jungho Pak, Won-Kyu Park, Myoung-Su Yang

Regular Issue Paper

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Jay J. Senkevich, B. Wang, J. B. Fortin, M. C. Nielsen, J. F. McDonald, T. -M. Lu, G. M. Nuesca, G. G. Peterson, S. C. Selbrede, M. T. Weise

Regular Issue Paper

Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

Shiwei Feng, Jun Hu, Yicheng Lu, Boris V. Yakshinskiy, James D. Wynn, Chuni Ghosh

Regular Issue Paper

Ta/Au ohmic contacts to n-type ZnO

H. Sheng, N. W. Emanetoglu, S. Muthukumar, B. V. Yakshinskiy, S. Feng, Y. Lu

Regular Issue Paper

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Y. M. Hsin, H. T. Hsu, K. P. Hseuh, W. B. Tang, C. C. Fan, C. H. Wang, C. W. Chen, N. Y. Li

Regular Issue Paper

Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers

M. W. Liang, T. E. Hsieh, S. Y. Chang, T. H. Chuang

Regular Issue Paper

Effects of vacuum annealing on electrical properties of GaN contacts

Ippei Fujimoto, Hirokuni Asamizu, Masahiro Shimada, Miki Moriyama, Naoki Shibata, Masanori Murakami

Regular Issue Paper

The electrical characteristics of 4H-SiC schottky diodes after inductively coupled plasma etching

N. O. V. Plank, Liudi Jiang, A. M. Gundlach, R. Cheung

Regular Issue Paper

Fabrication of ultra-thin strained silicon on insulator

T. S. Drake, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

Regular Issue Paper

Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

Shawn G. Thomas, Sushil Bharatan, Robert E. Jones, Rainer Thoma, Thomas Zirkle, N. V. Edwards, Ran Liu, Xiang Dong Wang, Qianghua Xie, Carsten Rosenblad, Juergen Ramm, Giovanni Isella, Hans Von Känel

Letter

Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films

Hiroshi Okada, Naoki Fujita, Hae-Seok Lee, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh