Issue 2/2021
Content (12 Articles)
Reducing Library Characterization Time for Cell-aware Test while Maintaining Test Quality
Zhan Gao, Min-Chun Hu, Santosh Malagi, Joe Swenton, Jos Huisken, Kees Goossens, Erik Jan Marinissen
A Low-Cost, Robust and Tolerant, Digital Scheme for Post-Bond Testing and Diagnosis of TSVs
Vasileios Gerakis, Yiorgos Tsiatouhas, Alkis Hatzopoulos
Fault Diagnosis Method of Low Noise Amplifier Based on Support Vector Machine and Hidden Markov Model
Lu Sun, Yang Li, Han Du, Peipei Liang, Fushun Nian
Evaluation of a Two-Tier Adaptive Indirect Test Flow for a Front-End RF Circuit
H. El Badawi, F. Azais, S. Bernard, M. Comte, V. Kerzerho, F. Lefevre
Tolerating Soft Errors with Horizontal-Vertical-Diagonal-N-Queen (HVDNQ) Parity
Muhammad Sheikh Sadi, Sumaiya Sumaiya, Mouly Dewan, Atikur Rahman
Radiation Tolerant SRAM Cell Design in 65nm Technology
JianAn Wang, Xue Wu, Haonan Tian, Lixiang Li, Shuting Shi, Li Chen
Soft Errors Sensitivity of SRAM Cells in Hold, Write, Read and Half-Selected Conditions
Cleiton Magano Marques, Cristina Meinhardt, Paulo Francisco Butzen
Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor
Shuting Shi, Rui Chen, Rui Liu, Mo Chen, Chen Shen, Xuantian Li, Haonan Tian, Li Chen
Method of Implanting Hardware Trojan Based on EHW in Part of Circuit
Lijun Liu, Tao Wang, Xiaohan Wang