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Journal of Materials Science: Materials in Electronics

Issue 4/2003

Content (9 Articles)

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Xiang-Ti Meng, Hong-Wei Yang, Ai-Guo Kang, Ji-Lin Wang, Hong-Yong Jia, Pei-Yi Chen, Pei-Hsin Tsien

Microwave dielectric properties of mixed phase ceramics, Ba(Zn1/3Ta2/3)O3–xCaTiO3 and xMgTiO3–yCaTiO3–z(Nd2O3,wTiO2)

Takahiro Takada, Keisuke Kageyama, Mitsuharu Yonemura, Naoki Hara, Satoshi Takao

Characterization of GaN and In x Ga1−x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

K. S. Ramaiah, D. Huang, M. A. Reshchikov, F. Yun, H. Morkoç, J. Jasinski, Z. Liliental-Weber, C. Sone, S. S. Park, K. Y. Lee