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2016 | OriginalPaper | Chapter

3. Low-Noise Amplifier Reliability

Author : Jiann-Shiun Yuan

Published in: CMOS RF Circuit Design for Reliability and Variability

Publisher: Springer Singapore

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Abstract

This chapter talks about low-noise amplifier performance degradation subjected to hot electron effect. In addition to physical explantions, analytical equations and experimental data are provided.

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previous chapter CMOS Transistor Reliability and Variability Mechanisms
next chapter Power Amplifier Reliability
Literature
1.
Cabric D, Chen M, Sobel D, Yang J, Broderson RW (2005) Future wireless systems: UWB, 60 GHz and cognitive radios. In: IEEE custom integrated circuits conference, pp 793–796
2.
Lee TH (1998) The design of CMOS radio-frequency integrated circuits. Cambridge University Press, Cambridge
3.
Naseh S, Deen MJ, Chen C-H (2005) Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers. IEEE Trans Device Mater Reliab 5:501–508
4.
Berenguer R, Liu G, Xu Y (2010) A low power 77 GHz low noise amplifier with an area efficient RF-ESD protection in 65 nm CMOS. IEEE Microwave Wireless Compon Lett 20:678–680
5.
Khanpour M, Tang KW, Garcia P, Voinigescu SP (2008) A wideband W-band receiver front-end in 65 nm CMOS. IEEE J Solid State Circ 43:1717–1730
6.
Yuan JS, Xu Y, Yen S-D, Bi Y, Hwang G-W (2014) Hot carrier injection stress effect on a 65 nm LNA at 70 GHz. IEEE Trans Device Mater Reliab 3:931–934
7.
Amat E, Kauerauf R, Degraeve R, Keersgieter An De, Rodriguez R, Nafria M, Aymerich X, Groeseneken G (2009) Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks. IEEE Trans Device Mater Reliab 425–430
8.
Guerin C, Huard V, Bravaix A (2007) Hot-carrier damage from high to low voltage using the energy-driven framework. Microelectron Eng 84:1938–1942
9.
Su H, Wang H, Liao H, Hu H (2012) Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress. IEEE Trans Electron Devices 59:3078–3083
Metadata
Title
Low-Noise Amplifier Reliability
Author
Jiann-Shiun Yuan
Copyright Year
2016
Publisher
Springer Singapore
Book
CMOS RF Circuit Design for Reliability and Variability

Print ISBN: 978-981-10-0882-5

Electronic ISBN: 978-981-10-0884-9

Copyright Year: 2016

DOI
https://doi.org/10.1007/978-981-10-0884-9_3