Advertisement
Published in:
01-03-2015
Low temperature sintering and microwave dielectric properties of LiMgVO4 ceramics
Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2015
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
LiMgVO4 ceramics were prepared by the conventional solid-state reaction method. Their structure and microwave dielectric properties have been investigated in relation to sintering condition. The XRD patterns of sintered samples revealed the single-phase formation with orthorhombic structure. As sintering temperature/time increased, the bulk density, ɛr and Q × f values increased to maximum and then decreased, respectively, while τf value did not change remarkably. The LiMgVO4 ceramics sintered at 700 °C for 4 h showed optimized microstructure and microwave dielectric properties of ɛr = 8.86, Q × f = 23,300 GHz (at 10.2 GHz) and τf = −140 ppm/°C, and it did not react with Ag electrode, which make it a promising candidate for LTCC applications.