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01-11-2019 | IONIZING RADIATION MEASUREMENTS | Issue 5/2019

Measurement Techniques 5/2019

Measurement of the Energy Resolution of Silicon X-Ray Detectors Using Absorption Edge Spectra

Journal:
Measurement Techniques > Issue 5/2019
Authors:
S. M. Osadchii, A. A. Petukhov, V. B. Dunin
Important notes
Translated from Izmeritel’naya Tekhnika, No. 5, pp. 65–68, May, 2019.
A silicon detector with a longitudinal silicon wafer has been developed. x-Ray spectra at the K-absorption edges of Au, Pb, and Bi are used to measure its energy resolution. The results are compared with measurements based on x-rays from a 241Am gamma-ray source. The dependence of the energy resolution of the detector on the noise of a charge-sensitive amplifier and on statistical fluctuations in pair production of carriers in the silicon is calculated.

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