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Journal of Computational Electronics

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04-06-2023

Mg₂Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

Authors: Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma

Published in: Journal of Computational Electronics | Issue 4/2023

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Abstract

We present the results of a simulation study of Mg₂Si heterojunction-based SOI TFETs using TCAD. Mg₂Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (I_ON), off-current (I_OFF), and subthreshold swing were found to be 1.089 × 10⁻⁵A/μm, 8.632 × 10⁻¹⁷A/μm, 1.26 × 10¹¹, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.

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Title: Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability
Authors: Sukanta Kumar Swain
Sangita Kumari Swain
Shashi Kant Sharma
Publication date: 04-06-2023
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 4/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02051-7

Comment on the paper “Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragmbased static/dynamic pressure sensors, Timuçin Emre Tabaru, Şekip Esat Hayber, Journal of Computational Electronics, 2021, 20:643–657”

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Mg₂Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

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First principles investigation of transition metal hydrides LiXH3 (X = Ti, Mn, and Cu) for hydrogen storage

Thermally compensated ZnO film bulk acoustic resonator for RF application above 5GHz frequency

Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices

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