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Published in: Journal of Materials Science: Materials in Electronics 21/2017

21-07-2017

MgBi2V2O9: preparation and electrical property evaluation

Authors: P. L. Deepti, S. K. Patri, R. N. P. Choudhary

Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2017

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Abstract

The bismuth layered structure oxide, MgBi2V2O9, was prepared using solid state reaction technique. Room temperature X-ray diffraction study confirms the formation of the material with a monoclinic crystal structure with lattice parameters 5.1950, 11.7010, and 5.0920 Å respectively. Morphological analysis from the SEM images reveals the formation of spherical grains in the sample. Electrical properties of the respective sample were observed in a wide range of temperature (25–500 °C) and frequency (1 kHz–1 MHz). The material exhibits dielectric dispersion. Hysteresis loop at room temperature proves the existence of ferroelectric property in the material. The d33 value of the ceramic sample was obtained as 7 C/N from piezoelectric study.

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Metadata
Title
MgBi2V2O9: preparation and electrical property evaluation
Authors
P. L. Deepti
S. K. Patri
R. N. P. Choudhary
Publication date
21-07-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 21/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7507-0

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