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Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization

  • 2023
  • OriginalPaper
  • Chapter
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Abstract

This chapter introduces a novel microcontroller-based portable measurement system designed to characterize GaN and SiC devices, addressing critical power losses in power electronics applications. The system focuses on measuring key figures of merit such as on-resistance, input capacitance, and threshold voltage variations, particularly in high-frequency ranges up to 1 MHz. By employing equivalent time sampling, the system achieves high sampling frequencies with a simplified and cost-effective design. Experimental results demonstrate the system's effectiveness in characterizing GaN and SiC devices, revealing insights into the frequency behavior of these important figures of merit. The chapter concludes with a discussion on the physical phenomena behind these behaviors and the potential for further research.

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Title
Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization
Authors
Alberto Vella
Giuseppe Galioto
Giuseppe Costantino Giaconia
Copyright Year
2023
DOI
https://doi.org/10.1007/978-3-031-30333-3_5
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