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Published in: Journal of Materials Science: Materials in Electronics 8/2014

01-08-2014

Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Authors: Jingjing Wang, Jianfeng Zhu, Yong Zhou, Fen Wang

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2014

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Abstract

The ZnO-based linear resistance ceramics doped with rare-earth oxides (Y2O3, La2O3) have been prepared by the conventional ceramics method. The effect of the different doping amounts of rare-earth oxides on the microstructure, electrical properties and aging behavior were investigated in detail. The electrical properties analysis shows that the La2O3 addition on ZnO-based linear resistance ceramics has more obviously influence than the addition of Y2O3. The samples with the La2O3 content of 0.25 mol% sintered at 1,320 °C exhibits excellent electrical properties with the resistivity of 253.5 Ω cm and the resistance temperature coefficient of 3.62 × 10−4/ °C, which are improved by 60 and 90 %, respectively. The nonlinear coefficient of voltage decreases to 1.16, decreases by 4.3 % and the stability of −1.2 % in the variation rate of the resistivity for aging temperature.

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Metadata
Title
Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics
Authors
Jingjing Wang
Jianfeng Zhu
Yong Zhou
Fen Wang
Publication date
01-08-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 8/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2018-8

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