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01-01-2015 | Issue 1/2015

Journal of Materials Science: Materials in Electronics 1/2015

Microstructure, ferro-piezoelectric and thermal stability of SiO2 modified BiFeO3–BaTiO3 high temperature piezoceramics

Journal:
Journal of Materials Science: Materials in Electronics > Issue 1/2015
Authors:
Zhonghua Yao, Chaobing Xu, Zhijian Wang, Zhe Song, Yiming Zhang, Wei Hu, Hua Hao, Minghe Cao, Hanxing Liu

Abstract

Development of high-temperature piezoelectric sensors is of great interest for harsh environment applications. The principal challenge for piezoelectric materials is their limitation for upper working temperature due to low Curie temperature and increasing conductivity at high temperatures. The effects of SiO2 addition on the microstructure, ferro-piezoelectric and thermal stability of 0.8BiFeO3–0.2BaTiO3 lead-free piezoelectric ceramics were investigated. XRD results indicated all the samples crystallized into the rhombohedrally distorted perovskite structure which was independent of the SiO2 addition. SiO2 could obviously inhibit the grain growth possibly due to the accumulation of SiO2 at the grain boundary. The leakage currents of 0.8BiFeO3–0.2BaTiO3 piezoceramics were remarkably reduced by certain amounts of added SiO2, facilitating the poling process, and improved their piezoelectric properties effectively. The optimal properties were obtained at the composition with 0.15 wt% SiO2 addition which retained high transition temperature ~628 °C. The samples sintered in O2 exhibited better thermal stability than those sintered in reduced atmospheres. Thus, SiO2 proved to be a successful additive to improve the 0.8BiFeO3–0.2BaTiO3 piezoceramics for high-temperature applications, as a result of increased resistivity and enhanced piezoelectric activity.

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