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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 3/2015

01-03-2015

Microwave dielectric properties of BaY2(MoO4)4 ceramic with low sintering temperature

Authors: Wen-Bo Li, Hai-Hong Xi, Di Zhou

Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2015

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Abstract

A low firing microwave dielectric ceramic BaY2(MoO4)4 with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity ~11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY2(MoO4)4–0.5TiO2 ceramic sintered at 970 °C for 2 h with a relative permittivity ~13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τf value of +0.8 ppm/°C.
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Metadata
Title
Microwave dielectric properties of BaY2(MoO4)4 ceramic with low sintering temperature
Authors
Wen-Bo Li
Hai-Hong Xi
Di Zhou
Publication date
01-03-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 3/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2583-x

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