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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 6/2021

24-02-2021

Mn-doped (Bi0.5Na0.5) TiO3 thin film with low leakage current density and high ferroelectric performance

Authors: Min Shi, Zhuolin Si, Enyang Men, Zheng Zhao, Yudong Xu, Ruzhong Zuo, Li Guo, Kunzhuang Hu

Published in: Journal of Materials Science: Materials in Electronics | Issue 6/2021

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Abstract

The films of (Bi0.5Na0.5)(Ti1-xMnx)O3-δ (BNTMx) were deposited on the substrates via the sol–gel method. The influence of the doping content of Mn on the microstructures and ferroelectric properties of the films were investigated. In addition, the valence states of Mn ions were analyzed. The results show that Mn ions have dissolved into the lattice of Bi0.5Na0.5TiO3 (BNT) without forming any secondary phase. When the doping content of Mn is 0.04, the film of BNTMx possesses a dense microstructure, maximum of remnant polarization (20.2 µC·cm−2), minimum value of leakage current density (3.31 × 10–5 A· cm−2), which shows good ferroelectric property and insulation performance. The results of XPS indicate that Mn ions exist in form of Mn2+, Mn3+ and Mn4+. The ratio of the amount of Mn4+ to that of Mn3+ and Mn2+ is 5.5:1. In this work, relationship between valence states of Mn ions and leakage current densities or ferroelectric property of the films were investigated in detail. The results will provide a new way for future applications of BNT-based multi-functional devices and an alternative for environmental-friendly ferroelectric materials.
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next article Boosting energy storage performance in Ba0.8Sr0.2Zr0.1Ti0.9O3–Na0.5Bi0.5TiO3 lead-free nanoceramics through polar nanoregions and grain refinement engineering

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Metadata
Title
Mn-doped (Bi0.5Na0.5) TiO3 thin film with low leakage current density and high ferroelectric performance
Authors
Min Shi
Zhuolin Si
Enyang Men
Zheng Zhao
Yudong Xu
Ruzhong Zuo
Li Guo
Kunzhuang Hu
Publication date
24-02-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 6/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05435-2

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