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Semiconductors
Published in: Semiconductors 4/2014

01-04-2014 | Physics of Semiconductor Devices

Model of the behavior of MOS structures under ionizing irradiation

Author: O. V. Aleksandrov

Published in: Semiconductors | Issue 4/2014

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previous article Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
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Metadata
Title
Model of the behavior of MOS structures under ionizing irradiation
Author
O. V. Aleksandrov
Publication date
01-04-2014
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 4/2014
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782614040046

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