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Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation Read chapter Read first chapter

2007 | OriginalPaper | Chapter

Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

Authors : L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang, L. T. Wang, T. L. Lee, C. C. Wang, Carlos H. Diaz

Published in: Simulation of Semiconductor Processes and Devices 2007

Publisher: Springer Vienna

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A continuum model of phosphorus diffusion with germanium and carbon coimplant has been proposed and calibrated based on secondary ion mass spectroscopy (SIMS) profiles aiming at ultra shallow junction (USJ) formation in advanced CMOS technologies. The phosphorus diffusion behaviors are well captured by our model under various implant and annealing conditions, representing a significant step towards advanced n-type USJ formation technique using phosphorus and carbon coimplant for aggressively scaled CMOS technologies.

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previous chapter Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
next chapter Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
Metadata
Title
Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
Authors
L. P. Huang
K. C. Ku
Y. M. Sheu
C. F. Nieh
C. H. Chen
H. Chang
L. T. Wang
T. L. Lee
C. C. Wang
Carlos H. Diaz
Copyright Year
2007
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2007

Print ISBN: 978-3-211-72860-4

Electronic ISBN: 978-3-211-72861-1

Copyright Year: 2007

DOI
https://doi.org/10.1007/978-3-211-72861-1_8