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Sustainability Assessment of Hybrid Community Energy Systems Read chapter Read first chapter

2015 | OriginalPaper | Chapter

34. Modeling the Structure Based on GaAsNBi/GaAs for Solar Cell

Authors : A. Aissat, A. Djili, S. Zelazel, J. P. Vilcot

Published in: Progress in Clean Energy, Volume 1

Publisher: Springer International Publishing

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Abstract

This work focuses on modeling and simulation of the structure based on GaAsNBi/GaAs for photovoltaic application. Indeed, the incorporation of a small composition nitrogen N <5 % and bismuth Bi <12 % induces the splitting of the conduction band into two bands and the valence band, respectively. Under the effect of this splitting, there is reduction of the bandgap which is very interesting for increasing the absorption. For x = 1 % and y = 10 %, the bandgap energy is E g = 0.68 eV and the absorption coefficient equal to 1.15 × 106 cm−1 with a yield around 20 %. The use of structures based on new materials allows us to improve the performance of the optical conversion.

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previous chapter Modeling of Heat Transfer in the PEMFC: Velocity Inlet and Current Density Effect
next chapter Phenomenological Study of a Cylindrical Solar Water Heater: Critical Analysis of the Mathematical Model
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Metadata
Title
Modeling the Structure Based on GaAsNBi/GaAs for Solar Cell
Authors
A. Aissat
A. Djili
S. Zelazel
J. P. Vilcot
Copyright Year
2015
Book
Progress in Clean Energy, Volume 1

Print ISBN: 978-3-319-16708-4

Electronic ISBN: 978-3-319-16709-1

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-3-319-16709-1_34