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Published in:
2016 | OriginalPaper | Chapter
Molecular Dynamics Simulations of Silicon: The Influence of Electron-Temperature Dependent Interactions
Authors : Alexander Kiselev, Johannes Roth, Hans-Rainer Trebin
Published in: High Performance Computing in Science and Engineering ´16
Publisher: Springer International Publishing
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Abstract
The well-known two-temperature model for solids with highly excited electrons is extended from metals to semiconductors. It is combined with classical molecular dynamics simulations to study laser ablation in semiconductors where charge carriers are created by the absorption of the laser light. The model is improved by extending the static modified Tersoff potential to a dynamical interaction which depends on the electron temperature of the material. Results are presented for single and double pulses in silicon and are compared to a simple rescale model where the laser energy is added as kinetic energy to the atoms.