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Journal of Computational Electronics

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01-06-2015

Monte Carlo simulation of hot carrier transport in III-N LEDs

Authors: Pyry Kivisaari, Jani Oksanen, Jukka Tulkki, Toufik Sadi

Published in: Journal of Computational Electronics | Issue 2/2015

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Abstract

Recent measurements aiming to resolve the origin of the efficiency droop in III-Nitride (III-N) light-emitting diodes (LEDs) have given invaluable information on the phenomenon and reinforced the interest for detailed device-level simulations. We have developed a microscopic device-level Monte Carlo model of electronic transport in III-N multi-quantum well (MQW) LEDs to analyze their operation in more detail and to increase the understanding of hot electrons generated by Auger recombination and electron overflow. In this work we apply the model to simulate the LED structure studied experimentally by Lin et al. (IEEE Photonics Technol Lett 24(18):1600, 2012) to compare the results to predictions given by the widely used drift-diffusion model and to investigate the relationship between the efficiency droop, Auger recombination, and the transport of hot electrons. To evaluate the reliability of the results and to enable comparison to other works, we also study how some of the most important uncertainties in the material parameters affect the results. In particular, we study how changing the polarization charges, properties of p-type GaN, and the sidevalley energy offset of the conduction band within the range reported in recent literature affects the results. Based on the results we discuss the difficulty to fit device-level models to measurements of the efficiency droop and the incomplete understanding of current transport in III-N MQW structures that might be limiting the development of next-generation optoelectronic devices.

previous article Introduction to the Special Issue on “Simulation of GaN-based Light-Emitting Diodes”

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Pimputkar, S., Speck, J.S., DenBaars, S.P., Nakamura, S.: Prospects for LED lighting. Nat. Photonics 3, 180–182 (2009)CrossRef

Nakamura, S., Krames, M.R.: History of gallium-nitride-based light-emitting diodes for illumination. Proc. IEEE 101, 2211–2220 (2013)CrossRef

Seong, T.-Y., Han, J., Amano, H., Morkoc, H.: History of gallium-nitride-based light-emitting diodes for illumination. Springer, Berlin (2013)

Cao, L., White, J.S., Park, J.-S., Schuller, J.A., Clemens, B.M., Brongersma, M.L.: Engineering light absorption in semiconductor nanowire devices. Nat. Mater. 8, 643–647 (2009)CrossRef

Wallentin, J., Anttu, N., Asoli, D., Huffman, M., Åberg, I., Magnusson, M.H., Siefer, G., Fuss-Kailuweit, P., Dimroth, F., Witzigmann, B., Xu, H.Q., Samuelson, L., Deppert, K., Borgström, M.T.: InP nanowire array solar cells achieving 13.8 % efficiency by exceeding the ray optics limit. Science 339, 1057–1060 (2013)CrossRef

Bayerl, D., Kioupakis, E.: Visible-wavelength polarized-light emission with small-diameter InN nanowires. Nano Lett. 14(7), 3709–3714 (2014)CrossRef

Kivisaari, P., Oksanen, J., Tulkki, J.: Current Injection to free-standing III-N nanowires by bipolar diffusion. Appl. Phys. Lett. 103, 031103 (2013)CrossRef

Riuttanen, L., Kivisaari, P., Nykänen, H., Svensk, O., Suihkonen, S., Oksanen, J., Tulkki, J., Sopanen, M.: Diffusion injected multi-quantum well light-emitting diode structure. Appl. Phys. Lett. 104, 081102 (2014)CrossRef

Barnes, W.L., Dereux, A., Ebbesen, T.W.: Surface plasmon subwavelength optics. Nature 424, 824–830 (2003)CrossRef

10.

Okamoto, K., Niki, I., Shvartser, A., Narukawa, Y., Mukai, T., Scherer, A.: Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nat. Mater. 3, 601–605 (2004)CrossRef

11.

Yeh, D.-M., Huang, C.-F., Chen, C.-Y., Lu, Y.-C., Yang, C.C.: Localized surface plasmon-induced emission enhancement of a green light-emitting diode. Nanotechnology 19, 345201 (2008)CrossRef

12.

Oulton, R.F., Sorger, V.J., Zentgraf, T., Ma, R.-M., Gladden, C., Dai, L., Bartal, G., Zhang, X.: Plasmon lasers at deep subwavelength scale. Nature 461, 629–632 (2009)CrossRef

13.

Sorger, V.J., Zhang, X.: Spotlight on plasmon lasers. Science 333, 709–710 (2011)CrossRef

14.

Homeyer, E., Mattila, P., Oksanen, J., Sadi, T., Nykänen, H., Suihkonen, S., Symonds, C., Tulkki, J., Tuomisto, F., Sopanen, M., Bellessa, J.: Enhanced light extraction from InGaN/GaN quantum wells with silver gratings. Appl. Phys. Lett. 102, 081110 (2013)CrossRef

15.

Sadi, T., Oksanen, J., Tulkki, J., Mattila, P., Bellessa, J.: The green’s function description of emission enhancement in grated LED structures. IEEE. J. Sel. Top. Quant. Electr. 19(5), 7800209 (2013)CrossRef

16.

Wierer Jr, J.J., David, A., Megens, M.M.: III-Nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat. Photonics 3, 163–169 (2009)CrossRef

17.

Shirasaki, Y., Supran, G.J., Bawendi, M.G., Bulović, V.: Emergence of colloidal quantum-dot light-emitting technologies. Nat. Photonics 7, 13–23 (2013)CrossRef

18.

Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207(10), 2217–2225 (2010)CrossRef

19.

Iveland, J., Martinelli, L., Peretti, J., Speck, J.S., Weisbuch, C.: Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013)CrossRef

20.

Iveland, J., Piccardo, M., Martinelli, L., Peretti, J., Choi, J.W., Young, N., Nakamura, S., Speck, J.S., Weisbuch, C.: Origin of electrons emitted into vacuum from InGaN light emitting diodes. Appl. Phys. Lett. 105, 052103 (2014)CrossRef

21.

Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H.-J., Sabathil, M., Bougeard, D., Wagner, J., Galler, B.: Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Appl. Phys. Lett. 103, 071108 (2013)CrossRef

22.

Bertazzi, F., Goano, M., Zhou, X., Calciati, M., Ghione, G., Matsubara, M.,Bellotti, E.: Comment on “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop”. [Phys. Rev. Lett. 110, 177406 (2013)]. arXiv: 1305.2512 (2013)

23.

Hader, J., Moloney, J.V., Koch, S.W.: Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. Proc. SPIE 9003, 900311 (2014)CrossRef

24.

Sadi, T., Kivisaari, P., Oksanen, J., Tulkki, J.: On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes. Appl. Phys. Lett. 105, 091106 (2014)CrossRef

25.

Kivisaari, P., Sadi, T., Oksanen, J., Tulkki, J.: Monte Carlo-drift-diffusion simulation of electron current transport in III-N LEDs. Proc. SPIE 8980, 898003 (2014)CrossRef

26.

Sadi, T., Kivisaari, P., Oksanen, J., Tulkki, J.: Microscopic simulation of hot electron transport in III-N light-emitting diodes. Opt. Quant. Electron. (2014, accepted)

27.

Piprek, J.: LED droop: a critical review and novel solution. Compd. Semicond. 20, 44–48 (2014)

28.

Lin, Y.-Y., Chuang, R.W., Chang, S.-J., Li, S., Jiao, Z.-Y., Ko, T.-K., Hon, S.J., Liu, C.H.: GaN-based LEDs with a chirped multiquantum barrier structure. IEEE Photonics Technol. Lett. 24(18), 1600–1602 (2012)CrossRef

29.

Piprek, J., Li, Z.M.S.: Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers. Appl. Phys. Lett. 102, 023510 (2013)CrossRef

30.

Wang, R., Ruden, P.P., Kolnik, J., Oguzman, I., Brennan, K.F.: Dielectric properties of wurtzite and zincblende gallium nitride. J. Phys. Chem. Solids 58, 913 (1997)CrossRef

31.

Albrecht, J.D., Wang, R.P., Ruden, P.P., Farahmand, M., Brennan, K.F.: Electron transport characteristics of GaN for high temperature device modeling. J. Appl. Phys. 83, 4777–4781 (1998)CrossRef

32.

Delaney, K.T., Rinke, P., Van de Walle, C.G.: Auger recombination rates in nitrides from first principles. Appl. Phys. Lett. 94, 191109 (2009)CrossRef

33.

de Carvalho, L.C., Schleife, A., Bechstedt, F.: Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes. Phys. Rev. B 84, 195105 (2011)CrossRef

34.

Wu, S., Geiser, P., Jun, J., Karpinski, J., Wang, D., Sobolewski, R.: Time-resolved intervalley transitions in GaN single crystals. J. Appl. Phys. 101, 043701 (2007)CrossRef

35.

Piccardo, M., Martinelli, L., Iveland, J., Young, N., DenBaars, S.P., Nakamura, S., Speck, J.S., Weisbuch, C., Peretti, J.: Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy. Phys. Rev. B 89, 235124 (2014)CrossRef

36.

Feneberg, M., Romero, M.F., Röppischer, M., Cobet, C., Esser, N., Neuschl, B., Thonke, K., Bickermann, M., Goldhahn, R.: Anisotropic absorption and emission of bulk (\(1\overline{1}00\)) AlN. Phys. Rev. B 87, 235209 (2013)CrossRef

37.

Zhang, H., Miller, E.J., Yu, E.T., Poblenz, C., Speck, J.S.: Measurement of polarization charge and conduction-band offset at In\(_x\)Ga\(_{1-x}\)N/GaN heterojunction interfaces. Appl. Phys. Lett. 84, 4644 (2004)CrossRef

38.

Fiorentini, V., Bernardini, F., Ambacher, O.: Evidence for nonlinear macroscopic polarization in IIIV nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204 (2002)CrossRef

39.

Yan, W.S., Zhang, R., Xie, Z.L., Xiu, X.Q., Han, P., Lu, H., Chen, P., Gu, S.L., Shi, Y., Zheng, Y.D., Liu, Z.G.: A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN. Appl. Phys. Lett. 94, 042106 (2009)CrossRef

40.

Kivisaari, P., Sadi, T., Oksanen, J., Tulkki, J.: Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs. Proc. SPIE 9363, 93631S (2015)

41.

Kivisaari, P., Oksanen, J., Tulkki, J.: Effects of lateral current injection in GaN multi-quantum well light-emitting diodes. J. Appl. Phys. 111, 103120 (2012)CrossRef

42.

Bulashevich, K.A., Mymrin, V.F., Karpov, S., Zu, Z.A.I., Zhmakin, I.A.: Simulation of visible and ultra-violet group-III nitride light emitting diodes. J. Comput. Phys. 213(1), 214–238 (2006)CrossRefMATH

43.

Piprek, J., Li, S.: GaN-based light-emitting diodes. In: Piprek, J. (ed.) Optoelectronic Devices: Advanced Simulation and Analysis. Springer, New York (2005)CrossRef

44.

Piprek, J., Li, S.: Electron leakage effects on GaN-based light-emitting diodes. Opt. Quant. Electron 42(2), 89–95 (2010)CrossRef

45.

Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S.: Properties of Advanced Semiconductor Materials. Wiley, New York (2001)

46.

Karpov, S.Y.: Visible light-emitting diodes. In: Piprek, J. (ed.) Nitride Semiconductor Devices. Wiley, New York (2007)

47.

Bellotti, E., Bertazzi, F.: Transport parameters for electrons and holes. In: Piprek, J. (ed.) Nitride Semiconductor Devices. Wiley, New York (2007)

48.

Kivisaari, P., Oksanen, J., Tulkki, J.: Polarization doping and the efficiency of III-nitride optoelectronic devices. Appl. Phys. Lett. 103, 211118 (2013)CrossRef

49.

Brennan, K.F.: The Physics of Semiconductors with Applications to Optoelectronic Devices. Cambridge University Press, Cambridge (1999)

50.

Jacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55, 645–705 (1983)CrossRef

51.

Jacoboni, C., Lugli, P.: The Monte Carlo Method for Semiconductor Device Simulation. Springer, Wien (1989)CrossRef

52.

Sadi, T., Kelsall, R.W., Pilgrim, N.J.: Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method. IEEE Trans. Electr. Dev. 53(12), 2892–2900 (2006)CrossRef

53.

Sadi, T., Kelsall, R.W.: Hot-phonon effect on the electrothermal behavior of submicrometer III-V HEMTs. IEEE Electr. Dev. Lett. 28(9), 787–789 (2007)CrossRef

54.

Sadi, T., Kelsall, R.W.: Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method. IEEE Trans. Electr. Dev. 55(4), 945–953 (2008)CrossRef

55.

Sadi, T., Kelsall, R.W., Pilgrim, N.J., Thobel, J.-L., Dessenne, F.: Monte Carlo study of self-heating in nanoscale devices. J. Comput. Electron. 11(1), 118–128 (2012)CrossRef

56.

Ridley, B.K.: Quantum Processes in Semiconductors. Clarendon Press, Oxford (1999)

57.

Schroeder, D.: Boundary and interface conditions of transport equations for device simulation. Adv. Solid State Phys. 36, 265–283 (1996)CrossRef

58.

Shockley, W., Read, J.W.T.: Statistics of the recombinations of holes and electrons. Phys. Rev. 87, 835–842 (1952)CrossRefMATH

59.

Hall, R.N.: Electron-hole recombination in Germanium. Phys. Rev. 87, 387 (1952)CrossRef

60.

Heikkilä, O., Oksanen, J., Tulkki, J.: Ultimate limit and temperature dependency of light-emitting diode efficiency. J. Appl. Phys. 105, 093119 (2009)CrossRef

61.

Singh, J.: Semiconductor Devices: An Introduction. McGraw-Hill, Inc, New York (1994)

62.

Haug, A.: Phonon-assisted Auger recombination in quantum well semiconductors. Appl. Phys. A 51, 354–356 (1990)CrossRef

63.

Deppner, M., Römer, F., Witzigmann, B.: Auger carrier leakage in III-nitride quantum-well light emitting diodes. Phys. Status Solidi RRL 6(11), 418–420 (2012)CrossRef

64.

Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101 (2013)CrossRef

65.

Kivisaari, P., Riuttanen, L., Oksanen, J., Suihkonen, S., Ali, M., Lipsanen, H., Tulkki, J.: Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes. Appl. Phys. Lett. 101, 021113 (2012)CrossRef

66.

Schiavon, D., Binder, M., Peter, M., Galler, B., Drechsel, P., Scholz, F.: Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes. Phys. Status Solidi B 250, 283–290 (2013)CrossRef

67.

Kioupakis, E., Rinke, P., Delaney, K.T., Van de Walle, C.G.: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett. 98, 161107 (2011)CrossRef

68.

Bertazzi, F., Goano, M., Bellotti, E.: Numerical analysis of indirect Auger transitions in InGaN. Appl. Phys. Lett. 101, 011111 (2012)CrossRef

69.

Kuo, Y.-K., Horng, S.-H., Yen, S.-H., Tsai, M.-C., Huang, M.-F.: Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes. Appl. Phys. A 98(3), 509–515 (2010)CrossRef

Title: Monte Carlo simulation of hot carrier transport in III-N LEDs
Authors: Pyry Kivisaari
Jani Oksanen
Jukka Tulkki
Toufik Sadi
Publication date: 01-06-2015
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 2/2015
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-015-0687-z

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