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Journal of Materials Science: Materials in Electronics

MoOx layer with abundant oxygen vacancies modified on Sn-doped α-Fe2O3 film for enhanced photoelectrochemical water oxidation performance

  • 01-05-2023
Published in:
Authors
Tao Pang
Peng Guo
Yequan Xiao
Hongxing Li
Rong Mo
Published in
Journal of Materials Science: Materials in Electronics | Issue 13/2023

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Abstract

The article delves into the optimization of photoelectrochemical water oxidation performance by modifying α-Fe2O3 film with a sub-stoichiometric molybdenum oxide (MoOx) layer rich in oxygen vacancies. The study highlights the enhanced charge separation and injection efficiency achieved through this modification, which results in a significant improvement in photocurrent density. The research focuses on the creation of an optimized heterojunction between MoOx and Sn-doped α-Fe2O3, demonstrating the potential of this approach for advancing solar energy conversion technologies. The article provides a comprehensive analysis of the charge dynamics and band structures, supported by experimental data from electrochemical impedance spectroscopy and Mott–Schottky analysis. The findings reveal that the optimized Z-shaped band alignment in the N2-annealed MoOx/Sn-Fe2O3 heterojunction photoanode leads to better photo-induced carrier separation and transfer properties. This work offers valuable insights into the development of high-performance photoanodes for efficient solar energy utilization.
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previous article Impact of high concentration of the Bi2O3 on the physical, mechanical and gamma ray shielding capability of the Bi2O3–TeO2–CdO glass system
next article Synthesis of cadmium-doped zinc oxide nanoparticles via sol–gel method for ethanol gas sensing application
Title
MoOx layer with abundant oxygen vacancies modified on Sn-doped α-Fe2O3 film for enhanced photoelectrochemical water oxidation performance
Authors
Tao Pang
Peng Guo
Yequan Xiao
Hongxing Li
Rong Mo
Publication date
01-05-2023
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 13/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-10519-2
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