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01-02-2017 | Issue 9/2017

Journal of Materials Science: Materials in Electronics 9/2017

Morphological development of CdSe0.6Te0.4 nanostructures by simple preparative parameters in electrochemical method and their subsequent influence on photoelectrochemical cell

Journal:
Journal of Materials Science: Materials in Electronics > Issue 9/2017
Authors:
S. K. Shinde, G. S. Ghodake, H. D. Dhaygude, R. V. Patel, D. Y. Kim, V. J. Fulari

Abstract

Cadmium seleno–telluride (CdSe0.6Te0.4) ternary thin films were deposited on the stainless steel and fluorine doped tin oxide glass substrates using galvanostatic mode at different bath concentrations of CdSO4. CdSe0.6Te0.4 thin films were characterized using X-ray diffraction (XRD), UV–Vis spectroscopy, and field emission scanning electron microscopy (FE-SEM), and contact angle measurements. XRD patterns revealed the formation of the crystalline CdSe0.6Te0.4 nanomaterial’s having hexagonal crystal structure. FE-SEM micrographs show the formation of different kind of nanostructure morphologies, such as nanoparticle-like, nanonest-like, and nanoflower. The optical study suggests range of variation in the band gap of CdSe0.6Te0.4 thin films. The electrochemical performance for the interconnected nanoparticle and nanonest, nanoflowers of the CdSe0.6Te0.4 electrode were found to be, about 0.61, 0.81 and 0.54%, respectively.

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