Skip to main content
Register
Springer Professional
SEARCH
Menu 1 2 3 4
Top

Hint

Swipe to navigate through the chapters of this book

Published in:
Historische Entwicklung Read chapter Read first chapter

2017 | OriginalPaper | Chapter

4. Nanoschichten

Author : Wolfgang R. Fahrner

Published in: Nanotechnologie und Nanoprozesse

Publisher: Springer Berlin Heidelberg

Login to get access
share
SHARE

Zusammenfassung

Allgemein wird die physikalische Abscheidung (physical vapor deposition, PVD) aus der Gasphase in vier Gruppen unterteilt, nämlich (i) Aufdampfung, (ii) Sputtern, (iii) Ionenplattieren und (iv) Laserabtrag. Die ersten drei Verfahren erfolgen bei kleineren Drücken. Ein grober Überblick ist in Abb. 4.1 zu sehen.
previous chapter Nanodefekte
next chapter Nanopartikel
Literature
1.
Choy KL (2000) Vapor processing of nanostructured materials. In: Nalwa HS (Hrsg) Handbook of nanostructured material and nanotechnology, Bd 1. Academic, New York
2.
Graper EB (1995) Resistance evaporation. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
3.
Graper EB (1995) Electron beam evaporation. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
4.
Shah SI (1995) Sputtering: introduction and general discussion. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
5.
Graper EB (1995) Ion vapour deposition. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
6.
Kawasaki M, Gong J, Nantoh M, Hasegawa T, Kitazawa K, Kumagai M, Hirai K, Horiguchi K, Yoshimoto M, Koinuma H (1993) Preparation and nanoscale characterization of highly stable YBa 2Cu 3O 7-δ thin films. Jpn J Appl Phys 32:1612 CrossRef
7.
Tsang WT (1985) Molecular beam epitaxy for III–V compound semiconductors. In: Willardson RK, Beer AC (Hrsg) Semiconductors and semimetals, Bd 22, part A. Academic, New York, S 96
8.
Joyce BA, Foxton CT (1977) Growth and doping of semiconductor films by molecular beam epitaxy. Solid state device (1976). ESSDERC 13–16.09.1976, Institute of Physics Conference No. 32
9.
Hansen M (1958) Constitution of binary alloys. McGraw-Hill, New York
10.
11.
Webber RF, Thorn RS, Large LN (1969) The measurement of electrical activity and hall mobility of boron and phosphorus ion-implanted layers in silicon. Int J Electron 26:163 CrossRef
12.
Dearnaley G, Freeman JH, Nelson RS, Stephen J (1973) Ion implantation. North-Holland, Amsterdam
13.
Gibbons JF, Johnson WS, Mylroie SW (1975) Projected range statistics. Dowden, Hutchinson, and Ross, Stroudsburg
14.
Maxwell HR Jr (1985) Process data. In: Beadle WE, Tsai JCC, Plummer RD (Hrsg) Quick reference manual for silicon integrated circuit technology. Wiley-Interscience, New York
15.
16.
Pliskin WA, Zanin SJ (1970) Film thickness and composition. In: Glang R, Maissel LI (Hrsg) Handbook of thin film technology. McGraw-Hill, New York
17.
Dorenwendt K (1985) Interferometrie. In: Kohlrausch F (Hrsg) Praktische Physik, 23. Aufl. Teubner-Verlag, Stuttgart, S 670
18.
Sugawara K, Nahazawa Y, Yoshimi T (1976) In situ thickness monitoring of thick polycrystalline silicon film and its application to silicon epitaxial growth. J Electrochem Soc 123(4):586 CrossRef
19.
Archer RJ (1962) Determination of the properties of films on silicon by method of ellipsometry. J Opt Soc Am 52:970 CrossRef
20.
Grabosch G, Fahrner WR (2000) Spectral ellipsometry and dark conductivity measurements on p- and n-type microcrystalline films. In: Micromat 2000, 17–19.04.2000, Berlin
21.
Pliskin WA, Zanin SJ (1970) Film thickness and composition. In: Glang R, Maissel LI (Hrsg) Handbook of thin film technology. McGraw-Hill, New York, S 11–30
22.
23.
Weima JA, Job R, Fahrner WR, Kosaca G, Müller N, Fries T (2001) Surface analysis of ultra-precisely polished chemical vapor deposited diamond films using spectroscopic and microscopic techniques. J Appl Phys 89:2434 CrossRef
24.
Schwuttke GH (1974) Damage profiles in silicon and their impact on device reliability. Technical report no. 5, ARPA contract DAHC15-72-C-0274
25.
Schwuttke GH (1965) New x-ray diffraction microscopy technique for the study of imperfections in semiconductor crystals. J Appl Phys 36:2712 CrossRef
26.
Chang SL, Thiel PA (1995) Low-energy electron diffraction. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
27.
Taylor NJ (1970) A LEED study of the epitaxial growth of copper on the (110) surface of tungsten photographs (compiled by I. H Khan). In: Maissel RI, Glang R (Hrsg) Handbook of thin film technology. McGraw-Hill, New York, S 10–36
28.
Joyce BA (1995) Reflection high-energy electron diffraction as a diagnostic technique in thin film growth studies. In: Glocker AD, Shah SI (Hrsg) Handbook of thin film process technology. Institute of Physics, Bristol
29.
Cain OJ, Vook RW (1978) Epitaxial layers of Cu 2S grown from liquid solution and investigated by RHEED. J Electrochem Soc 125:882 CrossRef
30.
Schindler R (1996) Semiconductor Technology. Skripte Der Fern Universität, Hagen
31.
Grasserbauer M, Dudek HJ, Ebel MF (1985) Angewandte Oberflächenanalyse. Springer, Berlin
32.
Job R, Ulyashin AG, Fahrner WR, Ivanov AI, Palmetshofer L (2001) Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted czochralski silicon. Appl Phys A72:325 CrossRef
33.
Baek SK, Choi CJ, Seong TY, Hwang H, Kim HK, Moon DW (2000) Characterization of sub-30 nm p +/n junction formed by plasma ion implantation. J Electrochem Soc 147:3091 CrossRef
34.
Lifshin E (1994) Electron microprobe analysis. In: Cahn RW, Haasen P, Kramer EJ (Hrsg) Material science and technology, Bd 2B. VCH, Weinheim
35.
Physical Electronics Industries. Untitled (1972)
36.
Pawlik D, Oppolzer H, Hilmer T (1985) Characterization of thermal oxides grown on TaSi 2/polysilicon films. J Vac Sci Technol B3:492 CrossRef
37.
Irvin JC (1962) Resistivity of bulk silicon and of diffused layers. BSTJ 41:387
38.
van der Pauw LJ (1958) A method of measuring specific resistivity and hall effect of discs of arbitrary shape. Philips Res Rep 13:1
39.
Fahrner WR, Klausmann E, Bräunig D (1987) Si/SiO 2 Intrinsic states and interface charges. Scientific Report of the Hahn-Meitner-Institute
40.
Fahrner WR, Bräunig D, Knoll M, Laschinski JR (1984) Ion implantation for deep (>100 μm) buried layers. In: Gupta DC (Hrsg) Semiconductor processing, ASTM STP 850. American Society for Testing and Materials
41.
Schreiber T (2001) Materials, Bd 13. Unaxis Semiconductors, Balzers, Liechtenstein, S 11
42.
Pliskin WA, Conrad EE (1964) Nondestructive determination of thickness and refractive index of transparent films. IBM J Res Dev 8:43 CrossRef
43.
Pliskin WA, Resch RP (1965) Refractive index of SiO 2 films grown on silicon. J Appl Phys 36:2011 CrossRef
44.
Reizman F, van Gelder WE (1967) Optical thickness measurements of SiO 2-Si 3N 4 films on Si. Solid State Electron 10:625 CrossRef
45.
Runyan WR (1965) Silicon semiconductor technology. McGraw-Hill, New York
46.
Borchert D, Wolffersdorf C, Fahrner WR (1995) A Simple compact measurement set-up for the optical characterization of solar cells. In: 13th European photovoltaic solar energy conference, Nice, 23–27.10
47.
Blaustein P, Hahn S (1989) Realtime inspection of wafer surfaces. Solid State Technol 32(12):27
48.
Jahns J (1998) Free-space optical digital computing and interconnection. In: Wolf E (Hrsg) Progres in optics. Elsevier, Amsterdam, S 419
49.
Fey D, Erhard W, Gruber M, Jahns J, Bartelt H, Grimm G, Hoppe L, Sinzinger S (2000) Optical interconnects for neural and reconfigurable VLSI architectures. Proc IEEE 88:838 CrossRef
Metadata
Title
Nanoschichten
Author
Wolfgang R. Fahrner
Copyright Year
2017
Publisher
Springer Berlin Heidelberg
Book
Nanotechnologie und Nanoprozesse

Print ISBN: 978-3-662-48907-9

Electronic ISBN: 978-3-662-48908-6

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-662-48908-6_4