Non-volatile Memory of New Generation and Ultrafast IR Modulators Based on Graphene on Ferroelectric Substrate

A review of recent achievements in graphene-on-ferroelectric systems is presented. These systems have several unique features. Among them are: the possibility to obtain the high carrier concentration (~10¹² cm⁻²) for the moderate gate voltages (of ~1 V) and the existence of hysteresis (or anti-hysteresis) in the dependence of the graphene channel resistance on the gate voltage. The use of ferroelectric substrates for graphene had enabled the construction of the robust elements of non-volatile memory of new generation. These elements operate for more than 10⁵ switches and preserve information for more than 1000 s. Graphene-on-ferroelectric systems can be characterized theoretically by the ultrafast rate of switching (~10–100 fs). It was also demonstrated theoretically, that the effective, fast and small modulators of the middle- and near-IR radiation for different optoelectronic applications can be constructed on the base of graphene on the Pb(Zr_xTi_1−x)O₃ ferroelectric substrate.