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Published in: Optical and Quantum Electronics 12/2013

01-12-2013

NOR and NAND gates using two photon absorption in silicon wire waveguide

Authors: Anirban Roy Chowdhury, Ivy Dutta, Dharmadas Kumbhakar

Published in: Optical and Quantum Electronics | Issue 12/2013

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Abstract

Ultrafast all-optical NOR gate based on two photon absorption (2PA) process in SOI waveguide is already established. We have designed NAND gate also based on this process with a novel waveguide coupler structure. Power attenuation due to 2PA process and the working of these gates is developed with FDTD simulation. Dominant 2PA process is incorporated in FDTD update equations and it is shown that the influence of high intensity pump pulses on a different frequency continuous probe beam can be utilized to form NOR as well as NAND gates.

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Metadata
Title
NOR and NAND gates using two photon absorption in silicon wire waveguide
Authors
Anirban Roy Chowdhury
Ivy Dutta
Dharmadas Kumbhakar
Publication date
01-12-2013
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 12/2013
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-013-9755-4

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