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Journal of Computational Electronics

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05-03-2024

Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell

Authors: Athil S. Al-Ezzi, M. N. M. Ansari

Published in: Journal of Computational Electronics | Issue 2/2024

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Abstract

The main objective of this paper is to present the fabrication of a flexible double-heterojunction gallium arsenide solar cell and analyse the photoelectric characteristics by experimental and numerical investigations. Remote epitaxy was used in addition to metal–organic chemical vapour deposition (MOCVD) to fabricate the flexible GaAs thin film. The practical power conversion efficiency (PCE) of the fabricated double heterojunction was nearly 20%, as tested by a solar simulator at air mass global condition AM1.5G (1000 W/m² insolation and 25 °C). The photoelectric characteristics, including the generation and recombination rates, band bending, carrier concentration and electric potential, were numerically investigated by COMSOL Multiphysics/Semiconductor Module. The experimental PCE was compared with the photovoltaic (PV) cell simulation data of 29% PCE using the MATLAB code/Newton–Raphson method. The comparison was not satisfactory, since the practical solar cell was exposed to high series resistance, which affected the PCE of the thin-film solar cell.

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Title: Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell
Authors: Athil S. Al-Ezzi
M. N. M. Ansari
Publication date: 05-03-2024
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 2/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02126-5

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Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell

Abstract

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Abstract

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Springer Professional "Wirtschaft+Technik"

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ANFIS-based impedance analysis of an infinite array of rectangular microstrip antennas

Design of a MIM sensor using an optical resonator and GMDH algorithm for high efficiency applications

Oscillations of transverse magnetoresistance in the conduction band of quantum wells at different temperatures and magnetic fields

Revealing structural, elastic, optoelectronic and thermoelectric properties of lead-free Ba2XTiO6 (X = Hf, Ce, Te) double perovskite for solar cells applications

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