Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
DE
EN
Books
Journals
Events
Topic Page
Marketing
Start single access now
Access for companies
12th International Engine Congress 2025 | 25. + 26. February 2025

Meeting Place for the Powertrain and Sustainable Fuels Community

The congress will examine the future role of the internal combustion engine and its non-fossil fuels from a global perspective with leading experts. Be part of it! More information and booking options are available on our website.
EXTENDED SEARCH
Log in
Top
Journal of Computational Electronics
Published in:

10-02-2024

On injection in intrinsic single-carrier devices

Author: Jason A. Röhr

Published in: Journal of Computational Electronics | Issue 2/2024

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic contacts, we calculate simple conditions for when these barriers are expected to limit injection and therefore significantly affect space-charge-limited currents in the device. We show that these conditions depend on the device temperature, semiconductor relative permittivity and effective density of states, but most importantly the thickness of the semiconducting film being probed. This is in accordance with previous observations and similar derived expressions for when defects influence single-carrier devices. The conditions described herein can be used to aid in the design of single-carrier devices for space-charge-limited current measurements that are not limited by injection.
previous article Computational design of D-π-A dyes for improved photovoltaic performance: a DFT approach
next article Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
Poplavskyy, D., Nelson, J.: Nondispersive hole transport in amorphous films of methoxy-spirofluorene-arylamine organic compound. J. Appl. Phys. 93, 341 (2003)CrossRef
2.
Katsouras, I., Najafi, A., Asadi, K., Kronemeijer, A.J., Oostra, A.J., Koster, L.J.A., de Leeuw, D.M., Blom, P.W.M.: Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field. Org. Electron. 14, 1591–1596 (2013)CrossRef
3.
Mackenzie, K.D., Le, C.P.G., Spear, W.E.: The density of states in amorphous silicon determined by space-charge-limited current measurements. Philos. Mag. Part B 46, 377–389 (1982)CrossRef
4.
Ou, S.S., Stafsudd, O.M., Bason, B.M.: Space-charge-limited current measurement of traps in p-type electrochemically deposited CdTe thin films. Thin Solid Films 112, 301–308 (1984)CrossRef
5.
SajediAlvar, M., Blom, P.W.M., Wetzelaer, G.J.A.H.: Space-charge-limited electron and hole currents in hybrid organic-inorganic perovskites. Nat. Commun. 11, 1–9 (2020)
6.
Duijnstee, E.A., Le, C.V.M., Johnston, M.B., Koster, L.J.A., Lim, J., Snaith, H.J.: Understanding dark current-voltage characteristics in metal-halide perovskite single crystals. Phys. Rev. Appl. 10, 1 (2021)
7.
Le Corre, V.M., Duijnstee, E., El Tambouli, O., Ball, J., Snaith, H., Lim, J., Koster, L.J.A.: Revealing charge carrier mobility and defect densities in metal halide perovskites via space-charge-limited current measurements. ACS Energy Lett. 6, 1087–1094 (2021)CrossRef
8.
Mark, P., Helfrich, W.: Space-charge-limited currents in organic crystals. J. Appl. Phys. 33, 205–215 (1962)CrossRef
9.
Röhr, J.A., Shi, X., Haque, S.A., Kirchartz, T., Nelson, J.: Charge transport in spiro-OMeTAD investigated through space-charge-limited current measurements. Phys. Rev. Appl. 9, 044017 (2018)CrossRef
10.
Mott, N.F., Gurney, R.W.: Electronic Processes in Ionic Crystals. Oxford University Press, Oxford (1940)
11.
Lampert, M., Mark, P.: Current Injections in Solids. Academic Press, Cambridge (1970)
12.
De Bruyn, P., Van Rest, A.H.P., Wetzelaer, G.A.H., De Leeuw, D.M., Blom, P.W.M.: Diffusion-limited current in organic metal-insulator-metal diodes. Phys. Rev. Lett. 111, 1–5 (2013)CrossRef
13.
Röhr, J.A., Mackenzie, R.C.I.: Analytical description of mixed ohmic and space-charge-limited conduction in single-carrier devices. J. Appl. Phys. 128, 165701 (2020)CrossRef
14.
Röhr, J.A., Moia, D., Haque, S.A., Kirchartz, T., Nelson, J.: Exploring the validity and limitations of the Mott–Gurney law for charge-carrier mobility determination of semiconducting thin-films. J. Phys. Condens. Matter 30, 105901 (2018)CrossRef
15.
Dacuña, J., Salleo, A.: Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility. Phys. Rev. B 84, 195209 (2011)CrossRef
16.
Dacuña, J., Xie, W., Salleo, A.: Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal. Phys. Rev. B 86, 115202 (2012)CrossRef
17.
Nicolai, H.T., Kuik, M., Wetzelaer, G.A.H., de Boer, B., Campbell, C., Risko, C., Brédas, J.L., Blom, P.W.M.: Unification of trap-limited electron transport in semiconducting polymers. Nat. Mater. 11, 882–887 (2012)CrossRef
18.
Lee, H.K.H., Telford, A.M., Röhr, J.A., Wyatt, M.F., Rice, B., Wu, J., De Castro, M.A., Tuladhar, S.M., Speller, E., McGettrick, J., Searle, J.R., Pont, S., Watson, T., Kirchartz, T., Durrant, J.R., Tsoi, W.C., Nelson, J., Li, Z.: The role of fullerenes in the environmental stability of polymer: fullerene solar cells. Energy Environ. Sci. 11, 417–428 (2018)CrossRef
19.
MacKenzie, R.C.I., Kirchartz, T., Dibb, G.F.A., Nelson, J.: Modeling nongeminate recombination in P3HT: PCBM solar cells. J. Phys. Chem. C 115, 9806–9813 (2011)CrossRef
20.
Röhr, J.A., Kirchartz, T., Nelson, J.: On the correct interpretation of the low voltage regime in intrinsic single-carrier devices. J. Phys. Condens. Matter 29, 205901 (2017)CrossRef
21.
de Levie, R., Seidah, N.G., Moreia, H.: Transport of ions of one kind through thin membranes. J. Membr. Biol. 10, 171–192 (1972)CrossRef
22.
Grinberg, A.A., Luryi, S.: Space-charge-limited current and capacitance in double-junction diodes. J. Appl. Phys. 61, 1181–1189 (1987)CrossRef
23.
Rose, A.: Space-charge-limited currents in solids. Phys. Rev. 97, 1538–1544 (1955)CrossRef
24.
Simmons, J.G.: Richardson-Schottky effect in solids. Phys. Rev. Lett. 15, 967–968 (1965)CrossRef
25.
26.
van Mensfoort, S.L.M., Coehoorn, R.: Effect of Gaussian disorder on the voltage dependence of the current density in sandwich-type devices based on organic semiconductors. Phys. Rev. B 78, 085207 (2008)CrossRef
Metadata
Title
On injection in intrinsic single-carrier devices
Author
Jason A. Röhr
Publication date
10-02-2024
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 2/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02129-w

Other articles of this Issue 2/2024

A design and modeling perspective on photostimulation of the subretinal prosthesis with graphene-based photodiodes

Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET

Flexible CNT/silicon piezo-resistive strain sensors geometrical influences on sensitivity for human motion detection

Characteristics prediction and optimization of InP HBT using machine learning

Computational design of D-π-A dyes for improved photovoltaic performance: a DFT approach

Novel analytical STFT expressions for nonlinear power engineering problem solving