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Journal of Computational Electronics
Published in: Journal of Computational Electronics 1/2018

13-11-2017

On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs

Authors: Chuyang Hong, James B. Kuo, Yijian Chen

Published in: Journal of Computational Electronics | Issue 1/2018

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Abstract

Various types of doped 1-D nonlinear Poisson’s equations existing in conventional and junctionless multi-gate MOSFET modeling literature are extensively examined. It is found that their reference levels used to define the potential in Poisson’s equation are different, and some of them are not compatible with the potential definition in the commonly used formula of oxide-interface boundary condition. Those correct equations are identified by showing their compatibility with the oxide-interface boundary condition and verified by TCAD simulations. Moreover, the necessity to introduce the concept of neutralization voltage to replace the flat-band voltage for non-uniformly doped MOSFETs is discussed.
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Metadata
Title
On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs
Authors
Chuyang Hong
James B. Kuo
Yijian Chen
Publication date
13-11-2017
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2018
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1112-6

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