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Semiconductors
Published in: Semiconductors 4/2014

01-04-2014 | Electronic Properties of Semiconductors

On the polarization caused by bulk charges and the ionic conductivity in TlInSe2 crystals

Authors: R. M. Sardarly, O. A. Samedov, N. A. Alieva, A. P. Abdullayev, E. K. Huseynov, I. S. Hasanov, F. T. Salmanov

Published in: Semiconductors | Issue 4/2014

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previous article On the thermal properties of Ag2Te and Ag2Se in the region of the phase transition
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Metadata
Title
On the polarization caused by bulk charges and the ionic conductivity in TlInSe2 crystals
Authors
R. M. Sardarly
O. A. Samedov
N. A. Alieva
A. P. Abdullayev
E. K. Huseynov
I. S. Hasanov
F. T. Salmanov
Publication date
01-04-2014
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 4/2014
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782614040253

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Calculation of the electron mobility for the Δ1 model of the conduction band of germanium single crystals

Electronic Properties of Semiconductors

Thermoelectric efficiency of intermetallic compound ZnSb

Fabrication, Treatment, and Testing of Materials and Structures

Formation of built-in potential in Si (100) crystals under microwave plasma treatment

Surfaces, Interfaces, and Thin Films

Study of GaInP solar-cell interfaces by variable-flux spectral measurements

Physics of Semiconductor Devices

Electrical properties of MOS diodes In/TiO2/p-CdTe

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