Optimization of CdS-free non-toxic electron transport layer for Sb₂S₃-based solar cell with notable enhanced performance

In this investigation, we develop CdS-free non-toxic thin-film solar cell structure with antimony sulfide (Sb₂S₃) as an absorber material. Sb₂S₃ has found to be a promising candidate for production of renewable energy. Solar cells based on Sb₂S₃ have been attracted worldwide attraction due to their outstanding efficiency and low cost. To serve as an optimistic buffer layer, 3C-SiC (cubic silicon carbide) is used thanks to its suitable bandgap to replace toxic cadmium sulfide (CdS). SCAPS-1D (one-dimensional solar cell capacitance simulator) software has been employed to numerically investigate the performance of Sb₂S₃-based n-ZnO/n-3C-SiC/p-Sb₂S₃ heterostructure solar cells. The influence of absorber/buffer layer thickness, acceptor/donor densities, and defect density on device working have been investigated. Consequently, the role of defects in p-Sb₂S₃ along with the significance of n-3C-SiC/p-Sb₂S₃ interface defects has been studied to provide recommendations for achieving high efficiency. The proposed structure provides the enhanced efficiency of 17% under 1.5 G illumination spectrum. The parameters regarding solar cell performance such as V_oc, J_sc, FF, QE and η have been studied graphically. This novel structure may have considerable influence on progress of improved photovoltaic devices in future.