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14-05-2018 | Issue 14/2018

Journal of Materials Science: Materials in Electronics 14/2018

Optimization of magnetodielectric coupling in Mn substituted BiFeO3 for potential memory devices

Journal:
Journal of Materials Science: Materials in Electronics > Issue 14/2018
Authors:
Ali Haider Khan, Shahid Atiq, M. Sabieh Anwar, Shahzad Naseem, Syed Kumail Abbas

Abstract

Coexistence of spontaneous magnetization and polarization is a key phenomenon in multiferroic materials whereas coupling among these order parameters is anticipated to play a vital role in modern day engineering devices and information technology. In this context, Mn substituted BiFeO3 was synthesized using sol–gel accompanying auto-combustion method. X-ray diffraction of the calcined BiFe1−xMnxO3 samples exhibited a crystalline nature and phase purity of the samples. Among the samples, BiFe0.8Mn0.2O3 depicted more stable rhombohedral structure as compared to BiFeO3, whereas mixed phases of orthorhombic and monoclinic were observed in BiFe1−xMnxO3 at 0.4 ≤ x ≤ 1.0. Surface morphology, as seen using a field emission electron microscope, revealed decreasing granular size which interpreted modified magnetic attributes examined by vibrating sample magnetometer for specific Mn contents. Elemental wt% were confirmed by energy dispersive X-ray spectroscopy. To extract the optimized results from Mn substituted BiFeO3, magnetodielectric coupling was examined as well under 6 kOe applied magnetic field which declared BiFe0.8Mn0.2O3 as the most optimized composition. Hence, this research work has opened the way for the material scientists and engineers to pursue more efficient multiferroics. It is an effective way to rectify various issues relevant to device applications like quick switching, magnetically controlled supercapacitors and designing fast and higher density data storage devices that is magnetoelectric random-access memories.

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