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Published in:

02-05-2023

Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling

Authors: A. Tarbi, T. Chtouki, M. A. Sellam, A. Benahmed, Y. El Kouari, H. Erguig, A. Migalska-Zalas, I. Goncharova, S. Taboukhat

Published in: Journal of Computational Electronics | Issue 4/2023

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Abstract

In this study, we investigated the optoelectronic behavior of In1−xGaxAs alloy epitaxy on a GaAs substrate by varying the chemical composition of gallium. We studied the impact of the elastic deformation generated by the lattice mismatch between the material and substrate on the bandgap energy and absorption coefficient. The hydrostatic pressure and temperature were considered. Our aim was to show that this constraint can also contribute to widening the bandgap range. The results were exploited to optimize the efficiency of solar cells based on copper indium gallium (di) selenide Cu (In, Ga) Se2 (CIGS) using an InGaAs absorbent layer, which must be strained to minimize the cost of the cell by reducing the Ga (x) content.

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Metadata
Title
Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling
Authors
A. Tarbi
T. Chtouki
M. A. Sellam
A. Benahmed
Y. El Kouari
H. Erguig
A. Migalska-Zalas
I. Goncharova
S. Taboukhat
Publication date
02-05-2023
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 4/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-023-02040-w