Oxidation of sputtered Zr thin film on Si substrate

Oxidation of sputtered Zr thin film on Si substrate has been investigated by varying oxidation times (5–60 min) at 500 °C. Fourier transform infrared spectroscopy indicated the existence of ZrO₂ by showing spectra of Zr–O. Vibration mode of Si–O and Zr–O–Si are also detected for all samples oxidized at different duration. This suggested the existence of SiO _x and Zr _x Si _y O _z compounds and they might be located at interfacial layers (ILs) between ZrO₂ and Si. Cross-sectional image of high resolution transmission electron microscopy taken from 60-min oxidized sample showed that both ZrO₂ and IL thickness is ~3.5 nm. Time-of-flight secondary-ion-mass spectroscopy suggested that Zr _x Si _y O _z may be formed after oxidized for 15 min. The proposed IL is consisted of a mixture of Zr _x Si _y O _z and SiO _x . A physical model has been established to explain the observation. Electrical characterization shows that capacitance–voltage curves have small hysteresis and their flatband voltages are shifted to a negative bias. Effective dielectric constant values of the investigated oxides are in the range of 4.22–5.29. Leakage current density–breakdown voltage characteristic shows that 5-min oxidized sample has the lowest dielectric breakdown voltage if compared with the other samples.