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Published in: Microsystem Technologies 12/2018

11-05-2018 | Technical Paper

Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications

Authors: P. Ashok Kumar, K. Girija Sravani, B. V. S. Sailaja, K. V. Vineetha, Koushik Guha, K. Srinivasa Rao

Published in: Microsystem Technologies | Issue 12/2018

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Abstract

In this paper the RF-MEMS switch with series–shunt configuration on a single quartz substrate is presented to achieve high isolation than the individual series or shunt switches. This paper presents the isolation of series–shunt configuration switch of 84.7 dB is achieved at 26 GHz when both switches are in OFF state which is higher than the OFF state of the individual series switch and shunt switches. The return loss (s11) is less than − 60 dB, insertion loss is less than − 0.09 dB is observed for better performance in satellite communication applications. The series/ohmic and shunt/capacitive membranes are designed with uniform spring structure and crab leg structure, respectively and simulated using FEM tool. Ashby’s method is used to select the materials for the switch membranes/beam and dielectric layer. The gap between the dielectric and the movable beam is maintained at 3 µm in series switch and 2.5 µm for shunt switch to achieve same pull-in voltage of 23.5 V. The up-state and down-state capacitance of the device is calculated and compared with the simulated results which are 0.24 and 14.2 fF, respectively by considering TiO2 as a dielectric layer between membrane and lower electrode.

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Metadata
Title
Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications
Authors
P. Ashok Kumar
K. Girija Sravani
B. V. S. Sailaja
K. V. Vineetha
Koushik Guha
K. Srinivasa Rao
Publication date
11-05-2018
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 12/2018
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-3907-1

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