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BER Performance Evaluation of Different Modulation Techniques for Underwater FSO Communication System Read chapter Read first chapter

2020 | OriginalPaper | Chapter

Performance of Double Gate Tunnel FET Devices with Source Pocket

Authors : Varun Mishra, Yogesh Kumar Verma, Prateek Kishor Verma, Ningthoujam Qoonand Singh, Santosh Kumar Gupta

Published in: Advances in VLSI, Communication, and Signal Processing

Publisher: Springer Singapore

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Abstract

It is known that due to several current injection mechanisms, tunnel FETs can attain a subthreshold swing less than 60 mV/dec at normal temperature, which makes it alternative for MOSFETs, particularly in low power applications. This work investigates the electrical and analog performance of dual metal double gate hetero dielectric source pocket TFETs in contrast to dual metal double gate high-k dielectric source pocket TFETs. Numerical calculations were carried out to find the characteristics of both the devices. It is observed that for hetero-dielectric structure, the OFF current decreases significantly while having the marginal effect on the ON state current in contrast to double gate high-k dielectric structure.

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Metadata
Title
Performance of Double Gate Tunnel FET Devices with Source Pocket
Authors
Varun Mishra
Yogesh Kumar Verma
Prateek Kishor Verma
Ningthoujam Qoonand Singh
Santosh Kumar Gupta
Copyright Year
2020
Publisher
Springer Singapore
Book
Advances in VLSI, Communication, and Signal Processing

Print ISBN: 978-981-329-774-6

Electronic ISBN: 978-981-329-775-3

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-981-32-9775-3_35