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Journal of Electronic Testing
Published in:

11-10-2021

Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability

Authors: Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb

Published in: Journal of Electronic Testing | Issue 4/2021

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Abstract

Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not have the capacity to retain data after power-off, preventing their use in non-volatile applications. This paper presents a novel Non-Volatile SRAM (NVSRAM) device based on Resistive RAM (RRAM) technology. A comparison between SRAM and the proposed NVSRAM performances is proposed at both cell and memory array level. The comparison covers several metrics such as energy consumption, area and static noise margin (SNM). Moreover, this work proposes a deep analysis of the impact of RRAM variability as well as the CMOS subsystem variability on the NVSRAM performances. The proposed structure demonstrates robust NVSRAM performances in terms of stability and reliability despite RRAM variability.
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Metadata
Title
Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability
Authors
Hussein Bazzi
Hassen Aziza
Mathieu Moreau
Adnan Harb
Publication date
11-10-2021
Publisher
Springer US
Published in
Journal of Electronic Testing / Issue 4/2021
Print ISSN: 0923-8174
Electronic ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-021-05965-x

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