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Journal of Materials Science: Materials in Electronics

Published in:

01-12-2009

Photoluminescence characteristics of synthesized copper doped Cd_1−xZn_xS quantum dots

Authors: Karamjit Singh, Sunil Kumar, N. K. Verma, H. S. Bhatti

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2009

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Abstract

Free standing powders of copper-doped Cd_1−xZn_xS (0 ≤ x ≤ 0.5) quantum dots (QDs) were synthesized using a simple chemical co-precipitation method. The copper concentration was varied from 0.01 to 10 at. wt% of Cd²⁺. X-ray diffraction and transmission electron microscope were used for crystallographic and morphological analyzes. Room temperature time resolved luminescence spectra were recorded using high peak power, pulsed N₂-laser excitation. Decay time values for bluish green and yellow emission have been calculated from recorded luminescence decay curves. Decay time dependence on Cu²⁺ and Zn²⁺ concentrations have been studied in detail. These QDs will have wide applications as nanophosphors, solar cells, photocatalysts and chemical sensors.

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Title: Photoluminescence characteristics of synthesized copper doped Cd1−x Zn x S quantum dots
Authors: Karamjit Singh
Sunil Kumar
N. K. Verma
H. S. Bhatti
Publication date: 01-12-2009
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 12/2009
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-008-9847-2

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