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Optical and Quantum Electronics

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01-06-2015

Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors

Authors: X. Q. Lu, D. Y. Xiong, X. Tong

Published in: Optical and Quantum Electronics | Issue 6/2015

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Abstract

We study the photogenerated carriers and photoreponsivity of very-long-wavelength (\(\sim \)17.0 \(\upmu \hbox {m}\)) InGaAs/GaAs quantum well infrared photodetectors (QWIPs). By calculating the density of photogenerated carriers in the continuum above the GaAs barriers, we have demonstrated that photocarriers transport from one InGaAs quantum well to the next in the form of Bloch waves. By including the elementary mechanisms involved in the photoresponse process in a self-consistent way, we have obtained the photocurrent, photoresponsivity and detectivities of the InGaAs/GaAs QWIPs. The obtained photocurrent and photoresponsivity were in good agreement with the experiments.

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Title: Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors
Authors: X. Q. Lu
D. Y. Xiong
X. Tong
Publication date: 01-06-2015
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 6/2015
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-014-0106-x

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