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2012 | OriginalPaper | Chapter

2. Physical and Mathematical Fundamentals

Authors : Bernd Lemaitre, Christoph Sohrmann, Lutz Muche, Joachim Haase

Published in: Process Variations and Probabilistic Integrated Circuit Design

Publisher: Springer New York

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Abstract

This chapter provides a short overview on the basics of CMOS transistor modeling with respect to deep submicron requirements and mathematical approaches to analyze variations in the design process. Technical terms are going to be defined and explained; physical processes and mathematical theories will be illustrated.

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previous chapter Introduction
next chapter Examination of Process Parameter Variations
Footnotes
1
Whether the symbol y refers to the value or to the function should be evident from the context.
 
2
\(\frac{1} {{\sigma }^{2}} \sim {\Sigma }^{-1}\) and erf\(\left ( \frac{c} {\sqrt{2}}\right ) = \mathcal{P}\left (\frac{1} {2}, \frac{{c}^{2}} {2} \right ).\)
 
3
PCA can be applied in the same manner.
 
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Metadata
Title
Physical and Mathematical Fundamentals
Authors
Bernd Lemaitre
Christoph Sohrmann
Lutz Muche
Joachim Haase
Copyright Year
2012
Publisher
Springer New York
Book
Process Variations and Probabilistic Integrated Circuit Design

Print ISBN: 978-1-4419-6620-9

Electronic ISBN: 978-1-4419-6621-6

Copyright Year: 2012

DOI
https://doi.org/10.1007/978-1-4419-6621-6_2